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The Potential of GaN HEMT on GaN Substrate
The Potential of GaN HEMT on GaN Substrateidentifier:oai:t2r2.star.titech.ac.jp ...
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Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT
2012 15th International Workshop on Computational Electronics, 2012Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism.
Balaji Padmanabhan +2 more
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Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
J.A. del Alamo, J. Joh
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This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
J.A. del Alamo, J. Joh
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UNSTRAINED InAlN/GaN HEMT STRUCTURE
International Journal of High Speed Electronics and Systems, 2004InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization.
M. Neuburger +11 more
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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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Stable high power GaN-ON-GaN HEMT
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004., 2004High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an
K. K. CHU, P. C. CHAO, J. A. WINDYKA
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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014
The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced.
M Alsharef +6 more
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The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced.
M Alsharef +6 more
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2011
A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
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A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
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