Results 171 to 180 of about 14,063 (222)
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p-GaN/AlGaN/GaN Enhancement-Mode HEMTs
2006 64th Device Research Conference, 2006GaN-based enhancement-mode (E-mode) HEMTs are attracting significant interest for integration of control circuitry and for the added safety of a normally-off device in power switching applications. While previous work reports excellent performance by gate-recessing1 and Fluorine-based plasma treatment2, the Schottky gate turn-on voltage of these ...
C. S. SHU +5 more
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AlGaN/GaN microwave power HEMT's
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003High average microwave power output density has been observed with AlGaN/GaN HEMT's grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed.
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Modeling reliability of GaN/AlGaN/AlN/GaN HEMT
2011 International Semiconductor Device Research Symposium (ISDRS), 2011III-V nitrides have attracted intense interest recently for applications in high-temperature, high-power electronic devices operating at microwave frequencies. Gallium Nitride (GaN), with a much larger band gap than Gallium Arsenide, has drawn recent interest in industry for use in blue laser diodes and microwave power field-effect transistors.
Balaji Padmanabhan +2 more
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Thermoelectromechanical simulation of GaN HEMTs
2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011As a tool for studying the critical issue of reliability in GaN HEMTs we develop a multi-dimensional device simulator based on a continuum formulation in which the electrical, mechanical, thermal and transport variables are fully coupled. The new simulator is illustrated with various examples involving HEMT operstion and failure.
M.G. Ancona, S.C. Binari
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Survivability of AlGaN/GaN HEMT
2007 IEEE/MTT-S International Microwave Symposium, 2007Using harmonic balance simulations, we have examined the survivability limiting mechanisms of a 0.2 mum T-gate AlGaN/GaN HEMT device under RF overdrive. Simulations are performed using a 4-finger 200 mum AlGaN/GaN HEMT device model. Two catastrophic failure mechanisms are identified. At low quiescent drain-source voltages (
Yaochung Chen +8 more
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Introducing Optical Cascode GaN HEMT
IEEE Transactions on Electron Devices, 2017A novel optically activated cascode gallium nitride (GaN) high-electron-mobility transistor (HEMT) is introduced and evaluated in this paper. Furthermore, optical triggering of GaN HEMT structures by cost-effective and high-power long-wavelength light sources is proposed for the first time.
Alireza Mojab +3 more
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Nonlinear characterization of GaN HEMT
Journal of Semiconductors, 2010DC I—V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced ...
Chi Chen +5 more
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GaN HEMT for Space Applications
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions.
Tomio Satoh, Ken Osawa, Atsushi Nitta
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