Results 31 to 40 of about 14,063 (222)
Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]
, 2011 We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D. +6 more
core +2 more sources
Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
Crystals, 2023 This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN
Yusnizam Yusuf +8 more
doaj +1 more source
GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
core +2 more sources
A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect
Electronics Letters, 2021 In this work, a novel GaN MIS‐HEMT (metal‐insulator‐semiconductor high electron mobility transistors) featuring a floating clamp (FC) electrode is proposed for suppressing the short‐channel effect.
Yijun Shi, Hongyue Wang
doaj +1 more source
Open-gated ph sensor fabricated on an undoped-algan/gan hemt structure [PDF]
, 2011 The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated.
Zainal Abidin, Mastura Shafinaz +4 more
core +1 more source
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
Applied Sciences, 2019 The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron ...
Haruka Matsuura +7 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu +6 more
doaj +1 more source
Micro & Nano Letters, 2021 An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou +9 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2023 This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (LG) of 100 nm was achieved through a 2-Step Photolithography Process and the gate
Ming-Wen Lee +6 more
doaj +1 more source
A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift [PDF]
APL Electronic DevicesThe characterization of deep levels in AlGaN/gallium nitride (GaN) heterostructures is one of the most important problems in GaN high electron mobility transistor (HEMT) technology.
Toshihiro Ohki +3 more
doaj +1 more source