Results 41 to 50 of about 14,063 (222)

Junction temperature prediction method of GaN HEMT power devices based on accurate on-voltage testing

Energy Reports, 2023
Compared with Si devices, GaN HEMT has lower on-resistance, lower junction capacitance, higher switching frequency, higher switching speed and higher junction temperature capability. It is widely used in automotive, aerospace and other fields.
Haihong Qin, Jiangjin Peng, Zimo Zhang, Fanghua Zhang, Xu Zhao, Zhenxiang Xu   +5 more
doaj   +1 more source

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor [PDF]

, 2015
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the ...
Catalàn, G., Chen, Han, Chenot, S., Chmielowska, M., Cordier, Y., Fisher, Craig A., Fontserè, A., Gammon, P. M., Iglesias, V., Jennings, M. R., Nafría, M., Placidi, M., Porti, M., Pérez-Tomás, Amador, Sharma, Yogesh K., Thomas, M.   +15 more
core   +3 more sources

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation [PDF]

, 2016
SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses ...
Evans, Paul, Johnson, Christopher Mark, Li, Ke   +2 more
core   +1 more source

Experimental verification of mobility modeling for N-polar GaN HEMTs [PDF]

AIP Advances
N-polar GaN high-electron-mobility transistors (HEMTs) show unique transfer characteristics originating from the band structure related to the inverted HEMTs, and some scattering mechanisms are suggested theoretically.
Akira Mukai, Shigeki Yoshida, Junya Yaita, Akihiro Hayasaka, Maui Hino, Junji Kotani, Kozo Makiyama, Ken Nakata   +7 more
doaj   +1 more source

Tri-gate GaN junction HEMT

Applied Physics Letters, 2020
This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-gate HEMTs, as they employ a Schottky or a metal-insulator-semiconductor (MIS) gate stack.
Yunwei Ma, Ming Xiao, Zhonghao Du, Xiaodong Yan, Kai Cheng, Michael Clavel, Mantu K. Hudait, Ivan Kravchenko, Han Wang, Yuhao Zhang   +9 more
openaire   +2 more sources

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions [PDF]

, 2017
The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V.
Acanski M., Chen Z., Chinthavali M., Friedrichs P., Li K., Li K., Li K., Mousa R., Schülting P., Srdic S., Ueda D., Wang J., Wu H.   +12 more
core   +2 more sources

125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]

, 2019
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran, Fuller, Gary A., George, Danielle, Lai, Richard, McGenn, William, Mei, Gerry, Readhead, Anthony, White, Daniel   +7 more
core   +2 more sources

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Energies, 2019
The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications.
Baochao Wang, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, Xuezhen Ding   +6 more
doaj   +1 more source