Results 51 to 60 of about 14,063 (222)
Micromachines, 2022 The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature.
Surajit Chakraborty, Tae-Woo Kim
doaj +1 more source
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]
, 2019 GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro +3 more
core +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Gallium Nitride Semiconductor Resonant Tunneling Transistor
Advanced Science, Volume 13, Issue 13, 3 March 2026.Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu +15 more
wiley +1 more source
5 Watt GaN HEMT Power Amplifier for LTE [PDF]
, 2014 This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier.
Collado, A. +3 more
core
4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching [PDF]
, 2018 A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems.
Kazuhiko HONJO +2 more
core +2 more sources
Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu +10 more
wiley +1 more source
GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]
, 2016 This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla +4 more
core
Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]
, 2012 The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart +24 more
core +2 more sources
Advanced Science, Volume 13, Issue 7, 3 February 2026.This work presents highly consistent GaN‐based thin‐film gas sensors prepared by MOCVD for non‐invasive breath analysis. The sensors exhibit tunable selectivity from oxidizing to reducing gases by incorporating In composition, ultra‐low detection limits and humidity resistance.
Yuxuan Wang +9 more
wiley +1 more source