Results 61 to 70 of about 14,063 (222)

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements [PDF]

, 2013
The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis.
Denis Marcon, Kikkawa T., Marco Silvestri, Martin Kuball, Michael J. Uren, Nicole Killat   +5 more
core   +3 more sources

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

IEEE Journal of the Electron Devices Society, 2020
MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability.
Rui Gao, Yijun Shi, Zhiyuan He, Yiqiang Chen, Yunfei En, Yun Huang, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Xuefeng Zheng, Jinfeng Zhang, Yang Liu   +11 more
doaj   +1 more source

Accurate Measurement of Dynamic on-State Resistances of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter [PDF]

, 2020
Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce ...
Evans, Paul, Idir, Nadir, Johnson, Mark, Li, Ke, Videt, Arnaud   +4 more
core   +4 more sources

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co‐workers demonstrate single‐crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier

Energies, 2022
The flyback converter with its active cell balancing topology for charging lithium-based batteries in Electrical Vehicles (EV) have been adopted recently into the industry. Electrical Vehicle battery charging requires high current operation in continuous
Yueh-Tsung Shieh, Ching-Yao Liu, Chih-Chiang Wu, Wei-Hua Chieng, Edward-Yi Chang   +4 more
doaj   +1 more source

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

, 2017
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想), Li, Xingxin, Luo, Muchang, Qin, Hua(秦华), Sun, Jiandong(孙建东), Sun, Yunfei(孙云飞), Yu, Yao, Zhang, Zhipeng(张志鹏), 孙建东, 秦华   +9 more
core   +1 more source

Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure [PDF]

, 2011
Cataloged from PDF version of article.The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition.
Bolukbas, B., Cakmak, H., Caliskan, D., Demirel, P., Ozbay, E., Ozturk, M., Yu, H.   +6 more
core   +1 more source

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source