Results 71 to 80 of about 14,063 (222)

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers [PDF]

, 2016
The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due tothe increasing thermal ...
Baranyai, Roland, Faili, Firooz, Francis, Daniel, Kuball, Martin, Pomeroy, James, Sun, Huarui, Twitchen, Daniel J.   +6 more
core   +3 more sources

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors

, 2019
The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization.
Bagnall, Kevin R., Englund, Dirk R., Foy, Christopher, Trusheim, Matthew E., Walsh, Michael, Wang, Evelyn N., Zhang, Lenan   +6 more
core   +1 more source

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

Rare Metals, Volume 45, Issue 2, February 2026.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang, Xiao‐Yue Liu, Te Xu, Jiang‐Wen Wang, Yuan‐Hong Shi, Shi‐Dai Tian, Xiang Zhang, Wei‐Guo Hu, Jun‐Yi Zhai   +8 more
wiley   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Materials Research Express, 2022
In this paper, a novel super junction technique in AlGaN/GaN HEMT is proposed and analyzed. The novel super junction is capable of splitting the potential drops to two points rather than a single point in the lateral axis (channel axis).
A Arunraja, S Jayanthy
doaj   +1 more source

A 2GHz GaN Class-J power amplifier for base station applications [PDF]

, 2011
The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were ...
McGeehan, JP, Mimis, K, Morris, KA
core   +2 more sources

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]

, 2006
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G., Das, J., Derluyn, J., Germain, M., Ji, H., Kuball, M., Oprins, H., Ruythooren, W., Sarua, A.   +8 more
core   +2 more sources

Polarity‐Controlled Volatile HfO2 Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing

Advanced Science, Volume 13, Issue 3, 14 January 2026.
This study demonstrates a TiN/HfO2/ITO memristor exhibiting field‐induced bimodal volatile switching behavior originating from ion bombardment during sputtering. The dipole‐driven, polarity‐dependent states produce multilevel output responses that expand the reservoir's output dimensionality and enhance encoding diversity.
Yuseong Jang, Chanmin Hwang, Myoungsu Chae, Taegi Kim, Hee‐Dong Kim   +4 more
wiley   +1 more source