Results 81 to 90 of about 14,063 (222)

Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters [PDF]

, 2016
In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance).
Blaabjerg, Frede, Castellazzi, Alberto, Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng   +4 more
core   +4 more sources

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s ...
Minshi Jia, Yaxing Liu, Zhigang Zhou, Tiansong Deng, Xiaomei Zhao, Xiao Wang, Haoming Yan, Vicente E. Boria   +7 more
wiley   +1 more source

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD [PDF]

, 2012
Cataloged from PDF version of article.We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer.
Cetin, S. S., Kasap, M., Kelekci, O., Ozbay, E., Ozcelik, S., Tasli, P.   +5 more
core   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

Advanced Functional Materials, Volume 35, Issue 51, December 16, 2025.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko, Oliver Bierwagen, Wonwoo Suh, Jeewon B. Choi, Celesta S. Chang, Kookrin Char   +5 more
wiley   +1 more source

AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

Advanced Materials Interfaces, Volume 12, Issue 23, December 8, 2025.
Growth of AlScN/GaN multichannel heterostructures by metal–organic chemical vapor deposition is demonstrated for the first time. The growth of such structures is detailed through changes in growth parameters, such as the number of periods and the thickness of the channel layers, as well as structural studies.
Teresa Duarte, Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Niklas Wolff, Susanne Beuer, Lorenz Kienle, Rüdiger Quay, Stefano Leone   +9 more
wiley   +1 more source

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Micromachines, 2019
In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to
Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Hyun-Seok Kim   +5 more
doaj   +1 more source

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

, 2019
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain.
Dolmanan, Surani B., Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy N., Tripathy, Sudhiranjan   +4 more
core   +1 more source

Analysis of GaN HEMTs Switching Transients Using Compact Model [PDF]

, 2017
The methodology to model GaN power HEMT switching transients at the circuit level is presented in this paper. A compact model to predict devices’ pulse switching characteristics and current collapse reliability issue has been developed.
Faramehr, Soroush, Igic, Petar
core   +1 more source

Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors

Advanced Materials Technologies, Volume 10, Issue 24, December 17, 2025.
High temperature annealing has been the main defect mitigation technology since the Bronze age. We propose a room temperatureannealing technique that could be effective for electrically conducting materials. The new technique is demonstrated on a Gallium Nitride high electron mobility transistor undergoing radiation damage.
Md Hafijur Rahman, Nahid Sultan Al‐Mamun, Sergei P. Stepanoff, Aman Haque, Fan Ren, Stephen J. Pearton, Douglas E. Wolfe   +6 more
wiley   +1 more source