Results 1 to 10 of about 37,695 (207)

Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials, 2021
From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs).
Yasushi Shoji, Ryo Tamaki, Yoshitaka Okada   +2 more
doaj   +2 more sources

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

AIP Advances, 2017
We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment.
Yasushi Shoji, Ryo Tamaki, Yoshitaka Okada   +2 more
doaj   +2 more sources

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Crystals, 2020
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates.
Marina Baryshnikova, Yves Mols, Yoshiyuki Ishii, Reynald Alcotte, Han Han, Thomas Hantschel, Olivier Richard, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout, Robert Langer, Bernardette Kunert   +11 more
doaj   +2 more sources

MOCVD Growth of GaSb and Al GaSb

Journal of Mathematical and Fundamental Sciences, 2019
. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low
E. Sustini, Sugianto Sugianto, P. Arifin, M. Barmawi   +3 more
doaj   +1 more source

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Nanomaterials, 2018
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C.
Evgeniy Chusovitin, Sergey Dotsenko, Svetlana Chusovitina, Dmitry Goroshko, Anton Gutakovskii, Evgeniy Subbotin, Konstantin Galkin, Nikolay Galkin   +7 more
doaj   +2 more sources

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces [PDF]

Nature Communications, 2021
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear.
Sebastian Manzo, P. J. Strohbeen, Z. Lim, V. Saraswat, Dongxue Du, Shining Xu, N. Pokharel, L. Mawst, M. Arnold, J. Kawasaki   +9 more
semanticscholar   +1 more source

First-principles feasibility assessment of a topological insulator at the InAs/GaSb interface [PDF]

PHYSICAL REVIEW MATERIALS, 2021
First principles simulations are conducted to shed light on the question of whether a two-dimensional topological insulator (2DTI) phase may be obtained at the interface between InAs and GaSb.
Shuyang Yang, D. Dardzinski, A. Hwang, D. Pikulin, G. Winkler, N. Marom   +5 more
semanticscholar   +1 more source

High Hole Mobility Polycrystalline GaSb Thin Films

Crystals, 2021
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C.
Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley   +9 more
doaj   +1 more source

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides.

Optics Express, 2022
The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need ...
N. Zia, H. Tuorila, J. Viheriälä, Samu‐Pekka Ojanen, E. Koivusalo, J. Hilska, M. Guina   +6 more
semanticscholar   +1 more source

تبیین اندازه‌گیری و کاربرد ارزش منصفانه بر اساس بیانیه 72 هیئت استانداردهای حسابداری دولتی [PDF]

حسابداری و بودجه‌ریزی بخش عمومی, 2021
اندازه‌گیری ارزش منصفانه و بکارگیری آن همواره یکی از موضوعات مهم بوده است. با انتشار استانداردهای بین‌المللی گزارشگری مالی (IFRS)، موضوع ارزش منصفانه بیشتر مورد توجه قرار گرفت.
زینب رستمی, سامان فقیه سلیمانی   +1 more
doaj