Nanomaterials, 2021 From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs).
Yasushi Shoji +2 more
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Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution [PDF]
Micromachines, 2023 This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material.
Michael J. Hall, Daryoosh Vashaee
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MOCVD Growth of GaSb and Al GaSb
Journal of Mathematical and Fundamental Sciences, 2019 . GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low
E. Sustini +3 more
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High Hole Mobility Polycrystalline GaSb Thin Films
Crystals, 2021 In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C.
Anya Curran +9 more
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تبیین اندازهگیری و کاربرد ارزش منصفانه بر اساس بیانیه 72 هیئت استانداردهای حسابداری دولتی [PDF]
حسابداری و بودجهریزی بخش عمومی, 2021 اندازهگیری ارزش منصفانه و بکارگیری آن همواره یکی از موضوعات مهم بوده است. با انتشار استانداردهای بینالمللی گزارشگری مالی (IFRS)، موضوع ارزش منصفانه بیشتر مورد توجه قرار گرفت.
زینب رستمی +1 more
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Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality
Frontiers in Materials, 2021 Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate ...
Bing Yan +6 more
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ABLAȚIE LASER APLICATA PENTRU SINTEZA FILMELOR SUBȚIRI DE GaSb‹Fe› ȘI GaSb‹Mn›
Acta et Commentationes: Ştiinţe Exacte şi ale Naturii, 2020 Cunoașterea proprietăților fizice ale antimonidului de galiu (GaSb) este importantă datorită implementării crescânde a GaSb în multe aplicații optice și electronice.
Mariana OSIAC, Igor POSTOLACHI
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High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
IEEE Journal of the Electron Devices Society, 2021 In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the ...
Sang-Hyeon Kim +11 more
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Study of interface asymmetry in InAs–GaSb heterojunctions [PDF]
, 1995 We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces.
Collins, D. A. +4 more
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اهمیت و کاربرد اطلاعات آیندهنگر در بخش دولتی و بازار سرمایه [PDF]
حسابداری و بودجهریزی بخش عمومی, 2020 در ایالات متحده، سه نوع دولت محلی، ایالتی و فدرال وجود دارد؛ دولتهای محلی و ایالتی از معیارهای هیئت استانداردهای حسابداری دولتی (GASB) و به خصوص مباحث بیانیههای 34 و 44 که شامل گزارش مالی جامع سالانه دولت (CAFR) میشود و دولت فدرال از معیارهای هیئت ...
کیومرث بیگلر +1 more
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