Results 11 to 20 of about 37,714 (225)

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]

open access: yesAdv Mater
SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Tailpied L   +8 more
europepmc   +2 more sources

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

open access: yesFrontiers in Materials, 2021
Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate ...
Bing Yan   +6 more
doaj   +1 more source

ABLAȚIE LASER APLICATA PENTRU SINTEZA FILMELOR SUBȚIRI DE GaSb‹Fe› ȘI GaSb‹Mn›

open access: yesActa et Commentationes: Ştiinţe Exacte şi ale Naturii, 2020
Cunoașterea proprietăților fizice ale antimonidului de galiu (GaSb) este importantă datorită implementării crescânde a GaSb în multe aplicații optice și electronice.
Mariana OSIAC, Igor POSTOLACHI
doaj   +1 more source

High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

open access: yesIEEE Journal of the Electron Devices Society, 2021
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the ...
Sang-Hyeon Kim   +11 more
doaj   +1 more source

اهمیت و کاربرد اطلاعات آینده‌نگر در بخش دولتی و بازار سرمایه [PDF]

open access: yesحسابداری و بودجه‌ریزی بخش عمومی, 2020
در ایالات متحده، سه نوع دولت محلی، ایالتی و فدرال وجود دارد؛ دولت‌های محلی و ایالتی از معیارهای هیئت استانداردهای حسابداری دولتی (GASB) و به خصوص مباحث بیانیه‌های 34 و 44 که شامل گزارش مالی جامع سالانه دولت (CAFR) می‌شود و دولت فدرال از معیارهای هیئت ...
کیومرث بیگلر   +1 more
doaj  

Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories

open access: yesFrontiers in Physics, 2022
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures.
Shuiliu Fang   +5 more
doaj   +1 more source

Study of interface asymmetry in InAs–GaSb heterojunctions [PDF]

open access: yes, 1995
We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces.
Collins, D. A.   +4 more
core   +1 more source

X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface [PDF]

open access: yes, 1993
X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction.
Collins, D. A.   +3 more
core   +1 more source

Four-point probe resistivity noise measurements of GaSb layers [PDF]

open access: yesBulletin of the Polish Academy of Sciences: Technical Sciences, 2020
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described.
L. Ciura   +3 more
doaj   +1 more source

The Economic Consequences of GASB Financial Statement Disclosure

open access: yesSocial Science Research Network, 2020
We examine whether Governmental Accounting Standards Board (GASB) financial statement disclosure influence local governments’ economic decision-making.
Michael Dambra   +2 more
semanticscholar   +1 more source

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