Results 11 to 20 of about 37,714 (225)
Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]
SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Tailpied L +8 more
europepmc +2 more sources
Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality
Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate ...
Bing Yan +6 more
doaj +1 more source
ABLAȚIE LASER APLICATA PENTRU SINTEZA FILMELOR SUBȚIRI DE GaSb‹Fe› ȘI GaSb‹Mn›
Cunoașterea proprietăților fizice ale antimonidului de galiu (GaSb) este importantă datorită implementării crescânde a GaSb în multe aplicații optice și electronice.
Mariana OSIAC, Igor POSTOLACHI
doaj +1 more source
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the ...
Sang-Hyeon Kim +11 more
doaj +1 more source
اهمیت و کاربرد اطلاعات آیندهنگر در بخش دولتی و بازار سرمایه [PDF]
در ایالات متحده، سه نوع دولت محلی، ایالتی و فدرال وجود دارد؛ دولتهای محلی و ایالتی از معیارهای هیئت استانداردهای حسابداری دولتی (GASB) و به خصوص مباحث بیانیههای 34 و 44 که شامل گزارش مالی جامع سالانه دولت (CAFR) میشود و دولت فدرال از معیارهای هیئت ...
کیومرث بیگلر +1 more
doaj
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures.
Shuiliu Fang +5 more
doaj +1 more source
Study of interface asymmetry in InAs–GaSb heterojunctions [PDF]
We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces.
Collins, D. A. +4 more
core +1 more source
X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface [PDF]
X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction.
Collins, D. A. +3 more
core +1 more source
Four-point probe resistivity noise measurements of GaSb layers [PDF]
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described.
L. Ciura +3 more
doaj +1 more source
The Economic Consequences of GASB Financial Statement Disclosure
We examine whether Governmental Accounting Standards Board (GASB) financial statement disclosure influence local governments’ economic decision-making.
Michael Dambra +2 more
semanticscholar +1 more source

