Results 11 to 20 of about 37,307 (275)

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing [PDF]

open access: goldAIP Advances, 2017
A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC.
Takahiro Gotow   +6 more
doaj   +2 more sources

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

open access: yesAIP Advances, 2017
We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment.
Yasushi Shoji   +2 more
doaj   +2 more sources

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

open access: yesCrystals, 2020
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates.
Marina Baryshnikova   +11 more
doaj   +2 more sources

Progress of optically pumped GaSb based semiconductor disk laser

open access: yesOpto-Electronic Advances, 2018
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently,
Shu Shili   +6 more
doaj   +2 more sources

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

open access: yesNanomaterials, 2018
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C.
Evgeniy Chusovitin   +7 more
doaj   +2 more sources

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]

open access: yesAdv Mater
SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Tailpied L   +8 more
europepmc   +2 more sources

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces [PDF]

open access: yesNature Communications, 2021
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear.
Sebastian Manzo   +9 more
semanticscholar   +1 more source

First-principles feasibility assessment of a topological insulator at the InAs/GaSb interface [PDF]

open access: yesPHYSICAL REVIEW MATERIALS, 2021
First principles simulations are conducted to shed light on the question of whether a two-dimensional topological insulator (2DTI) phase may be obtained at the interface between InAs and GaSb.
Shuyang Yang   +5 more
semanticscholar   +1 more source

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides.

open access: yesOptics Express, 2022
The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need ...
N. Zia   +6 more
semanticscholar   +1 more source

Investigation of GaSb Microislands Deposited on Si Substrates with Ag Nanoparticles. [PDF]

open access: goldACS Omega
Donchev V   +7 more
europepmc   +2 more sources

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