Results 21 to 30 of about 37,714 (225)
بررسی دلایل نیاز به بازنگری در استانداردهای موجود هیئت استانداردهای حسابداری دولتی (GASB) [PDF]
حسابداری و بودجهریزی بخش عمومی, 2021 هیئت استانداردهای حسابداری دولتی، استانداردهایی را در جهت گزارشگری مالی دولتهای محلی و ایالتی وضع میکند. این استانداردها در جهات مختلف، راهنمایی برای دولتها است تا با استفاده از آن، امور و گزارشگری مالی خود را بهتر و کاراتر انجام دهند.
افشین شورج سمائی
doaj
Large gap quantum spin Hall insulator, massless Dirac fermions and bilayer graphene analogue in InAs/Ga(In)Sb heterostructures [PDF]
, 2017 The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers.
Krishtopenko, S. S., Teppe, F.
core +2 more sources
Compressively-strained GaSb nanowires with core-shell heterostructures
Nano Reseach, 2020 GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties.
Zhongyunshen Zhu +5 more
semanticscholar +1 more source
Nano-porosity in GaSb induced by swift heavy ion irradiation [PDF]
, 2016 Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime.
Afra, B +12 more
core +1 more source
Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
AIP Advances, 2017 A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC.
Takahiro Gotow +6 more
doaj +1 more source
Nanoscale Research Letters, 2017 We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates.
Xianghai Ji, Xiaoguang Yang, Tao Yang
doaj +1 more source
GHz Compact Laser Enabled by GaSb Nanowires as Saturable Absorbers
Advanced Photonics Research, 2023 Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires (NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them ideal candidates for broadband optical modulation.
Yanxue Yin +7 more
doaj +1 more source
Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors
Crystals, 2017 Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications.
Shouzhu Niu +6 more
doaj +1 more source
The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Photonics, 2023 Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
doaj +1 more source
Progress of optically pumped GaSb based semiconductor disk laser
Opto-Electronic Advances, 2018 This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently,
Shu Shili +6 more
doaj +1 more source