Results 21 to 30 of about 37,307 (275)
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures.
Shuiliu Fang +5 more
doaj +1 more source
Four-point probe resistivity noise measurements of GaSb layers [PDF]
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described.
L. Ciura +3 more
doaj +1 more source
Compressively-strained GaSb nanowires with core-shell heterostructures
GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties.
Zhongyunshen Zhu +5 more
semanticscholar +1 more source
بررسی دلایل نیاز به بازنگری در استانداردهای موجود هیئت استانداردهای حسابداری دولتی (GASB) [PDF]
هیئت استانداردهای حسابداری دولتی، استانداردهایی را در جهت گزارشگری مالی دولتهای محلی و ایالتی وضع میکند. این استانداردها در جهات مختلف، راهنمایی برای دولتها است تا با استفاده از آن، امور و گزارشگری مالی خود را بهتر و کاراتر انجام دهند.
افشین شورج سمائی
doaj
Large gap quantum spin Hall insulator, massless Dirac fermions and bilayer graphene analogue in InAs/Ga(In)Sb heterostructures [PDF]
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers.
Krishtopenko, S. S., Teppe, F.
core +2 more sources
The Economic Consequences of GASB Financial Statement Disclosure
We examine whether Governmental Accounting Standards Board (GASB) financial statement disclosure influence local governments’ economic decision-making.
Michael Dambra +2 more
semanticscholar +1 more source
GHz Compact Laser Enabled by GaSb Nanowires as Saturable Absorbers
Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires (NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them ideal candidates for broadband optical modulation.
Yanxue Yin +7 more
doaj +1 more source
Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy [PDF]
As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements ...
A G Taboada +8 more
core +2 more sources
We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates.
Xianghai Ji, Xiaoguang Yang, Tao Yang
doaj +1 more source
The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
doaj +1 more source

