Results 41 to 50 of about 6,152 (186)
, 2007 We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood +9 more
core +1 more source
In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption [PDF]
Journal of Crystal Growth, 2000 The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated.
Vineis, C.J., Wang, C.A., Jensen, K.F.
openaire +3 more sources
Engineering Proceedings, 2023 Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR ...
Kacper Matuszelański +4 more
doaj +1 more source
Photonics, 2021 Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011].
Rajeev R. Kosireddy +3 more
doaj +1 more source
Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium [PDF]
, 2000 We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces.
González, E. M., Lin, Y., Mendez, E. E.
core +3 more sources
Photonics, 2020 In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported
U. Zavala-Moran +7 more
doaj +1 more source
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon
Advanced Electronic Materials, 2022 ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storage in a floating gate accessed through a triple‐barrier resonant tunneling heterostructure.
Peter D. Hodgson +5 more
doaj +1 more source
INFLUENCE OF THE SUBSTRATE TEMPERATURE ON OPTICAL AND STRUCTURAL PROPERTIES OF GaSb:Ni ALLOYS
Momento, 2018 GaSb:Ni ternary alloys thin films were deposited via sputtering method (DC magnetron Co{Sputtering) varying the substrate temperature (Ts). From spectra transmittance measurements and X-ray diffraction (XRD) were obtained the optical constants and ...
Heiddy P. Quiroz, Anderson Dussan
doaj +1 more source
Electric fields and valence band offsets at strained [111] heterojunctions
, 1997 [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
%N. Tit +29 more
core +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source