Results 41 to 50 of about 2,109,434 (243)
Engineering Proceedings, 2023 Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR ...
Kacper Matuszelański +4 more
doaj +1 more source
Atomic hydrogen cleaning of GaSb(001) surfaces [PDF]
, 1996 We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (
Bell, Gavin R. +1 more
core +1 more source
Multispectral mid-infrared light emitting diodes on a GaAs substrate [PDF]
, 2017 We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate.
Aziz, Mohsin +6 more
core +1 more source
Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors
Materials, 2023 Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current ...
Peng Cao +4 more
semanticscholar +1 more source
, 2007 We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood +9 more
core +1 more source
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
, 2005 We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other.
Pistol, M. -E., Pryor, C. E.
core +1 more source
Design of a high contrast grating GaSb-based VCSEL integrated on silicon-on-insulator [PDF]
, 2013 We present a GaSb-VCSEL concept using SOI-based HCGs as highly reflective mirrors. The optical properties of two different grating designs are simulated using RCWA.
Roelkens, Günther +2 more
core +1 more source
Photonics, 2021 Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011].
Rajeev R. Kosireddy +3 more
doaj +1 more source
Electric fields and valence band offsets at strained [111] heterojunctions
, 1997 [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
%N. Tit +29 more
core +1 more source
Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy [PDF]
, 2013 As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements ...
A G Taboada +8 more
core +2 more sources