Results 61 to 70 of about 2,109,434 (243)
Interband cascade lasers with room temperature threshold current densities below 100 A/cm(2) [PDF]
, 2013 Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operation at room temperature are presented. The laser structure comprises 10 active stages of 41 nm length, each stage containing a W-quantum well active region
Höfling, Sven +2 more
core +2 more sources
Nanoscale Ripples at the Surface of SrTiO3 Irradiated by a Broad Low‐Energy Ar+ (7 keV) Ion Beam
Small, EarlyView.Broad Ar ion beam irradiation creates self‐organized ripple nanostructures on oxide surfaces. A schematic illustrates the process, while cross‐sectional STEM imaging captures the ripple morphology. Complementary elemental mapping by EELS highlights nanoscale chemical variations, linking ion‐beam nanostructuring with structural and compositional ...
Mohammad S. Jamal +9 more
wiley +1 more source
Micromachines, 2021 Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio +5 more
doaj +1 more source
Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium [PDF]
, 2000 We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces.
González, E. M., Lin, Y., Mendez, E. E.
core +3 more sources
Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.This review examines the evolution and current state of concentrated photovoltaic systems, focusing on materials, manufacturing pathways, and thermal management challenges. Advanced cooling techniques and emerging applications are assessed alongside recent digital integration strategies. Through linking performance gains with practical limitations, the
Abdul Ghani Olabi +7 more
wiley +1 more source
New Journal of Physics, 2021 Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non ...
Petr Steindl +4 more
doaj +1 more source
P-n junctions formed in gallium antimonide [PDF]
, 1970 Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride ...
Clough, R., Richman, D., Tietjen, J.
core +1 more source
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Laser &Photonics Reviews, Volume 20, Issue 6, 18 March 2026.Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
AIP Advances, 2020 A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated.
Donghai Wu +3 more
doaj +1 more source
Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers
Технологія та конструювання в електронній апаратурі, 2008 The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj