Results 61 to 70 of about 6,152 (186)

Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers

Технологія та конструювання в електронній апаратурі, 2008
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj  

Sensor of hydrostatic pressure based on gallium antimonide microcrystals

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2015
Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors.
A. A. Druzhinin, I. I. Maryamova, A. P. Kutrakov, N. S. Liakh-Kaguy   +3 more
doaj   +1 more source

Enhanced THz Emission and Exciton Transfer in Monolayer MoS2/GaAs Heterostructures

Advanced Photonics Research, Volume 7, Issue 1, January 2026.
This study demonstrates enhanced terahertz (THz) emission from a hybrid structure combining monolayer MoS2 with low‐temperature‐grown GaAs. The mixed‐dimensional van der Waals heterostructure shows a 15% increase in THz output and improved optical conductivity, driven by efficient exciton transfer and nonlinear optical effects, offering a new route for
C. Abinash Bhuyan, Anil K. Chaudhary, Kishore K. Madapu, P. Naveen Kumar, Sandip Dhara   +4 more
wiley   +1 more source

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

Crystals, 2016
Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation.
Charles J. Reyner, Arnold M. Kiefer, Gamini Ariyawansa, Joshua M. Duran, John E. Scheihing   +4 more
doaj   +1 more source

Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices [PDF]

, 1998
We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to
A. Lorke, B. J. van Wees, C. Albrecht, C. Gould, C. Nguyen, C. Nguyen, D. Többen, D. Weiss, D. Weiss, D. Weiss, F.-C. Wang, G. Borghs, I. V. Zozoulenko, J. De Boeck, J. Eroms, J. H. Smet, L. Ö. Olsson, M. Altarelli, M. Behet, M. Zitzlsperger, R. Fleischmann, R. Fleischmann, R. Kubo   +22 more
core   +2 more sources

Lithium and Vanadium Intercalation into Bilayer V2Se2O: Ferrimagnetic–Ferroelastic Multiferroics and Anomalous and Spin Transport

Advanced Science, Volume 13, Issue 5, 27 January 2026.
Li‐ and V‐intercalated V2Se2O bilayers possess intralayer ferrimagnetic and interlayer ferromagnetic orders, alongside ferroelasticity, in‐plane uniaxial magnetic anisotropy, half‐metal/enhanced spin splitting, the anomalous Hall effect, giant magnetoresistance, tunneling magnetoresistance, near‐perfect spin filtering effect, spin Seebeck effect, and ...
Long Zhang, Yuxin Liu, Junfeng Ren, Guangqian Ding, Xiaotian Wang, Guangxin Ni, Guoying Gao, Zhenxiang Cheng   +7 more
wiley   +1 more source

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Advanced Materials Interfaces
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes.
Logan Riney, Seul‐Ki Bac, Maksym Zhukovskyi, Tatyana Orlova, Shelby S. Fields, Jiashu Wang, Tommy Kotte, David Graf, Steven P. Bennett, Xinyu Liu, Badih A. Assaf   +10 more
doaj   +1 more source

Improved Electron Transport Properties in InSb/Ga0.22In0.78Sb Composite Channel HEMT Structures

physica status solidi (a), Volume 223, Issue 2, January 2026.
The effectiveness of double‐sided Te δ‐doping and engineered buffer structure consisting of GaSb buffer and AlInSb‐graded buffer is investigated in InSb/Ga0.22In0.78 Sb composite channel HEMTs. The degree of threading dislocation suppression is quantitatively analyzed using a pair‐annihilation model.
Tatsuhisa Oba, Tomoki Jinnai, Reo Ebihara, Wataru Nakajima, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Akifumi Kasamatsu, Akira Endoh, Hiroki I. Fujishiro   +10 more
wiley   +1 more source

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

physica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome, Paula Mouriño Miñambres, Alicia Peiro Codoñer, Miguel Sinusia Lozano, Zhao Yan, Ivan Garcia Vara, Thierry Baron, Qiang Li, Víctor J. Gómez   +8 more
wiley   +1 more source

Manufacturing of 100mm diameter GaSb substrates for advanced space based applications [PDF]

, 2012
Engineered substrates such as large diameter (100mm) GaSb wafers need to be ready years in advance of any major shift in DoD and commercial technology, and typically before much of the rest of the materials and equipment for fabricating next generation ...
Allen, L. P., Dallas, G., Flint, J. P., Hill, C. J., Khoshakhlagh, A., Meshew, G., Trevethan, J.   +6 more
core   +1 more source