Results 71 to 80 of about 6,152 (186)

Photoluminescence Properties of Type‐II GaSb/GaAs Quantum Rings

Advanced Photonics Research, Volume 6, Issue 12, December 2025.
This study examines the magneto‐optical properties of GaSb/GaAs quantum rings (QRs) using photoluminescence spectroscopy. Recombination dynamics in single‐ and ten‐layer structures are analyzed through activation energy extraction, optical absorption profiling, and observation of a strong excitation‐induced blue shift. Carrier lifetime is also increase
Shumithira Gandan, Anna Musiał, Wojciech Rudno‐Rudziński, Marek G. Mikulicz, Denise Montesdeoca, Michael Schmidt, Juan S. D. Morales, Andrew J. Marshall, Anthony Krier, Peter J. Carrington, Grzegorz Sęk   +10 more
wiley   +1 more source

Germanium Laser Power Converters at 1550 nm with Efficiencies Over 30%

Solar RRL, Volume 9, Issue 23, December 2025.
Germanium laser power converters convert laser light into electrical power at 1550 nm, offering eye safety and atmospheric transparency. We present improved Ge‐based converters achieving record efficiencies of 30.8% at 6.7 W/cm2. We analyze current limitations and provide a roadmap for efficiencies exceeding 39%, demonstrating the expanding role of ...
Ignacio Rey‐Stolle, Pablo Martín, Aitana Cano, Iván García   +3 more
wiley   +1 more source

Compositionally Tunable 2D PtSexTey Alloys Synthesized via Thermally Assisted Conversion for Mid‐Wave Infrared Photodetection

Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.
This work successfully demonstrates compositional engineering in a 2D PtSexTey system synthesized via direct thermally assisted conversion. Optical characterization confirms a strong correlation between composition and band gap. A photodetector based on a heterojunction of p‐type PtSexTey and n‐type Si exhibits a clear photoresponse to blackbody ...
Dongki Shin, Yunjin Lee, Jiyoung Kim, Youngjo Choi, Woong Kim   +4 more
wiley   +1 more source

Structural anisotropy in Sb thin films

APL Materials
Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties.
Pradip Adhikari, Anuradha Wijesinghe, Anjali Rathore, Timothy Jinsoo Yoo, Gyehyeon Kim, Sinchul Yeom, Hyoung-Taek Lee, Alessandro R. Mazza, Changhee Sohn, Hyeong-Ryeol Park, Mina Yoon, Matthew Brahlek, Honggyu Kim, Joon Sue Lee   +13 more
doaj   +1 more source

The Parent GaH2SbH2 Monomer Stabilized by an N‐Heterocyclic Carbene

ChemistryEurope, Volume 3, Issue 5, September 18, 2025.
The synthesis of the novel stibanyltrielanes NHC·EH2Sb(SiMe3)2 (1a: E = Ga, 1b: E = B) stabilized only by an N‐heterocyclic carbene by salt metathesis using KSb(SiMe3)2 is presented. Moreover, by using K(18c6)SbH2 the parent compounds NHC·EH2SbH2 (2a: E = B, 3: E = Ga) are obtained.
Robert Szlosek, Kevin Dollberg, Gábor Balázs, Michael Seidl, Carsten von Hänisch, Manfred Scheer   +5 more
wiley   +1 more source

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

IEEE Journal of the Electron Devices Society, 2017
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque   +6 more
doaj   +1 more source

Reduced auger recombination in mid-infrared semiconductor lasers [PDF]

, 2011
A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6 lower Auger current loss at room
Bedford, Robert, Hader, Jorg, Koch, Stephan W, Moloney, Jerome, Tomich, David H, Triplett, Gregory Edward   +5 more
core   +1 more source

Sketch and Peel Focused Ion Beam Patterning of Black Phosphorus for Mid‐Infrared Photonics

Advanced Optical Materials, Volume 13, Issue 27, September 23, 2025.
“Sketch and peel” method nano‐fabricates black phosphorus (BP) with minimal damage. A focused‐neon ion beam “sketches” the pattern, followed by polyvinyl acetate‐based “peeling” to remove surrounding flakes. Thermal treatment preserves the mid‐infrared (MIR) emission of the isolated “Koala” structure, proving it as an enabling technology for future BP ...
Huan Liu, Anders Barlow, Alexander Corletto, Christopher R. Hall, James Bullock, Shi Tang, Sivacarendran Balendhran, Seyed Saleh Mousavi Khaleghi, Sergey Rubanov, Trevor A. Smith, Yaping Dan, Kenneth Crozier   +11 more
wiley   +1 more source

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Advanced Physics Research
The monolithic integration of III‐Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high‐quality epitaxy of the III‐V on the Si substrate, as the differences ...
A. Gilbert, M. Ramonda, G. Patriarche, E. Tournié, J.‐B. Rodriguez   +4 more
doaj   +1 more source

Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots

, 2013
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region.
Afanasev, A., Kechiantz, A.
core   +1 more source