Results 71 to 80 of about 2,109,434 (243)

Sensor of hydrostatic pressure based on gallium antimonide microcrystals

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2015
Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors.
A. A. Druzhinin, I. I. Maryamova, A. P. Kutrakov, N. S. Liakh-Kaguy   +3 more
doaj   +1 more source

Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

Journal of Electronic Materials, 2017
Undoped GaSb epilayers, deposited at low growth temperature (440°C), have been grown on GaAs (001) substrate with 2° offcut towards [110], by a molecular beam epitaxy system. Interfacial misfit array (IMF) growth mode has been used in order to impede the
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski   +6 more
semanticscholar   +1 more source

Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence

Advanced Science, Volume 13, Issue 9, 13 February 2026.
An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan, Xiren Chen, Liangqing Zhu, Lijuan Wang, Man Wang, Shumin Wang, Jun Shao   +6 more
wiley   +1 more source

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

Crystals, 2016
Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation.
Charles J. Reyner, Arnold M. Kiefer, Gamini Ariyawansa, Joshua M. Duran, John E. Scheihing   +4 more
doaj   +1 more source

Enhancing Stability at High Temperature in GaSb‐Based Phase‐Change Materials via Carbon Introduction

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 2, February 2026.
Introducing carbon in GaSb alloys boosts thermal stability of the amorphous phase. Crystallization temperature rises, grains shrink, Sb segregation drops, and compressive strain forms. Amorphous phase stays stable to ∼270°C, with 10 times higher electrical contrast and low‐density change (<4%), making these alloys promising for high‐temperature, high ...
Jacopo Remondina, Gabriele Navarro, Magali Putero   +2 more
wiley   +1 more source

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

, 2010
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance.
A Javey, Alexandra C. Ford, Ali Javey, D-H Kim, D-H Kim, D-H Kim, E Yablonovitch, Elena Plis, G Balakrishnan, GC DeSalvo, GK Celler, H Yonezu, H-C Yuan, Ha Sul Kim, Hui Fang, Hyunhyub Ko, J Yoon, K Martens, K Yoh, Kartik Ganapathi, Kuniharu Takei, M Heyns, M Lundstrom, M Lundstrom, M Radosavljevic, M Yokoyama, MA Meitl, Morten Madsen, MP Mikhailova, N Melosh, P Javorka, Paul W. Leu, PH-S Wong, R Chau, Rehan Kapadia, Sanjay Krishna, Sayeef Salahuddin, Steven Chuang, Szu-Ying Chen, T Bryllert, TN Theis, Y Liu, Y-L Chueh, YQ Wu, Yu-Lun Chueh   +44 more
core   +1 more source

Correlated X‐Ray and Electron Microscopies of a Single Biphasic GaAs Nanowire

Small Methods, Volume 10, Issue 3, 9 February 2026.
Nano‐focused scanning X‐ray diffraction microscopy at a synchrotron light source, combined with transmission electron microscopy, reveals a clear correlation between the nanoscale distribution of cubic and hexagonal segments in a GaAs nanowire with subtle variations in inter‐reticular spacing, bending, and twisting.
Thomas Dursap, Tao Zhou, Maxime Dupraz, Stéphane Labat, Olivier Thomas, Niels Fardeau, Philippe Regreny, Michel Gendry, Solène Brottet, Nicholas P. Blanchard, Martin V. Holt, Marie‐Ingrid Richard, Alexandru Danescu, José Penuelas, Matthieu Bugnet   +14 more
wiley   +1 more source

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Advanced Materials Interfaces
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes.
Logan Riney, Seul‐Ki Bac, Maksym Zhukovskyi, Tatyana Orlova, Shelby S. Fields, Jiashu Wang, Tommy Kotte, David Graf, Steven P. Bennett, Xinyu Liu, Badih A. Assaf   +10 more
doaj   +1 more source

Strain‐Engineered Monolithic Multi‐Band LEDs for Simultaneous Short‐Wavelength and Mid‐Wavelength Infrared Emission

Advanced Materials, Volume 38, Issue 3, 13 January 2026.
A monolithic multi‐band LED capable of simultaneously emitting short‐ and mid‐wavelength infrared light is demonstrated, enabled by Sb doping–driven strain engineering that achieves balanced strain compensation and coherent epitaxy in the quantum wells.
Hee Joon Jung, Dongwan Kim, Phuc Dinh Nguyen, Sangjun Kang, Jiyeon Jeon, Thu Trang Thi Bui, Jungwon Yoon, Minkyeong Kim, Changsug Lee, Robert Sinclair, In‐Ho Lee, Byong Sun Chun, Sang Jun Lee   +12 more
wiley   +1 more source

On‐Chip Perovskite Coolers

Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.
Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu, Manaswini Bhamidimarri, Shubhra Bansal   +2 more
wiley   +1 more source