Results 101 to 110 of about 85,724 (295)

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

IEEE Journal of the Electron Devices Society
Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology computer-aided design (TCAD) device simulation data of GAA field-effect ...
Ji Hwan Lee, Kihwan Kim, Kyungjin Rim, Soogine Chong, Hyunbo Cho, Saeroonter Oh   +5 more
doaj   +1 more source

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Applied Sciences, 2018
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani, Stefan Trellenkamp, Andreas Tiedemann, Siegfried Mantl, Qing-Tai Zhao   +4 more
doaj   +1 more source

Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds

Advanced Functional Materials, EarlyView.
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley   +1 more source

Electrostatically‐Stabilized PEG‐Free Lipid Nanoparticles for Systemic Nucleic Acid Delivery

Advanced Functional Materials, EarlyView.
This work describes non‐PEGylated layered lipid nanoparticles (nonPEG LLNPs), a gene delivery platform that improves upon standard PEGylated LNPs via electrostatic adsorption of charged polymers. nonPEG LLNPs maintain colloidal stability under biological stresses, enhance circulation time, and mitigate accelerated blood clearance and hepatic ...
Namita Nabar, Deeksha Kumaresh, Eduardo Nombera Bueno, Mae Pryor, Paula T. Hammond   +4 more
wiley   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Analysis of Structural Variation and Threshold Voltage Modulation in 10-nm Double Gate-All-Around (DGAA) Transistor [PDF]

, 2014
Increasing short channel effects (SCE) interrupt the further technology scaling in the CMOS transistors. Beyond 10 nm technology node, the gate-all-around (GAA) FET is considered as a promising solution for continuing the Moore's law. In this paper,
Kim, Youngmin, Youngmin Kim, Ryu, Myunghwan, Myunghwan Ryu   +3 more
core   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

Advanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah, Livy Laysandra, Kosuke Terayama, Xingyu Yang, Atsushi Isobe, Tai‐Chin Chiang, Tsuyoshi Michinobu, Yu‐Cheng Chiu   +7 more
wiley   +1 more source

GeSn Vertical Gate-all-around Nanowire n-type MOSFETs [PDF]

, 2022
Vertical GeSn gate-all-around (GAA) nanowire nMOSFETs fabricated using a top-down approach are presented. The devices are benchmarked with similar Ge and Ge/GeSn/Ge heterostructure devices to underline the great potential of GeSn for future nMOS devices.
Han, Yi, Concepción Díaz, Omar, Bae, Jin Hee, Frauenrath, Marvin, Hartmann, Jean-Michel, Junk, Yannik, Buca, Dan Mihai, Zhao, Qing-Tai, Grützmacher, Detlev   +8 more
core  

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source