Results 91 to 100 of about 85,724 (295)

Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate [PDF]

, 2007
A MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated.
Se-Hoon Lee, Sagnik Dey, Prashant Majhi, Sachin V. Joshi, Sanjay K. Banerjee   +4 more
core   +1 more source

Velocity‐Tunable Exciton‐Photon Hybridization in Cathodoluminescence

Advanced Functional Materials, EarlyView.
Transition‐radiation resonances in suspended thin crystals hybridise with excitonic transitions under free‐electron excitation. By tuning the electron energy, the photonic resonances are continuously detuned across the exciton states, enabling controllable exciton–photon hybridisation below the diffraction limit without altering the system geometry ...
Sven Ebel, Martin Nørgaard, Christian Nicolaisen Hansen, N. Asger Mortensen, Sergii Morozov   +4 more
wiley   +1 more source

Controlling Proton Migration in Oxide Heterostructures by Interfacial Chemical Potential Mismatch

Advanced Functional Materials, EarlyView.
Interfacial reconstruction of the proton chemical potential enables control of proton migration in oxide heterostructures. In TiO2/VO2 heterostructures, we found that increasing the TiO2 capping layer thickness by only several nanometers modulates the thermal stability of protons inserted into VO2.
Sota Fuji, Lingling Xie, Ryotaro Aso, Takuya Majima, Takeshi Watanabe, Yuichi Shimakawa, Daisuke Kan   +6 more
wiley   +1 more source

Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect Transistors [PDF]

, 2011
Electrostatic discharge (ESD) performance, including trigger voltage, failure current, on-resistance and leakage current, of the gate-all-around silicon nanowire field-effect transistor depends on nanowire diameter, gate length and nanowire numbers.
Juin J. Liou, Chung, J., N. Singh, Lo, G. Q., G. Q. Lo, Liou, J. J., Singh, N., Liu, W., J. Chung, Wen Liu, Y. H. Jeong   +10 more
core   +1 more source

Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications

Advanced Electronic Materials
Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface‐driven transport phenomena due to their high surface‐to‐volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states
Aniello Pelella, Valeria Demontis, Andrea Sessa, Adolfo Mazzotti, Filippo Giubileo, Valentina Zannier, Lucia Sorba, Francesco Rossella, Antonio Di Bartolomeo   +8 more
doaj   +1 more source

Spectrally Selective Bipolar Self‐Powered Opto‐Synaptic Responses in Tandem 2D van Der Waals Ferroelectric Heterojunctions

Advanced Functional Materials, EarlyView.
Tandem 2D vdW ferroelectric heterojunctions enable spectrally selective, self‐powered bipolar opto‐synaptic responses for retinal ON/OFF bipolar cell emulation and wavelength‐programmable logic operations. This work establishes vdW ferroelectric heterojunctions as a compelling materials platform for energy‐efficient, adaptive, and human‐like artificial
Rajiv Kumar Pandey, Chang Yong Park, Cheolhwa Jang, Taeho Kang, Sungjoo Lee   +4 more
wiley   +1 more source

Indolo‐Fused MR‐TADF Materials and their Application in Organelle‐Targeted Bioimaging

Advanced Functional Materials, EarlyView.
Using indolo‐fusion and sulfur bridging, four multi‐resonance thermally activated delayed fluorescent (MR‐TADF) materials are reported based on the quinolino[3,2,1‐de]acridine‐5,9‐dione (QAO) framework. Functionalization of these dyes with phosphonium groups enables cellular imaging with mitochondrial targeting in glassy organic nanoparticles ...
Sushil Sharma, Xujun Qiu, Thomas Kalab, Athan T. Gogoulis, Brian O. Patrick, Zachary M. Hudson   +5 more
wiley   +1 more source

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates [PDF]

, 2014
We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz.
Memisevic, Elvedin,, Lind, Erik,, Johansson, Sofia,, Lund University., Wernersson, Lars-Erik,   +4 more
core   +3 more sources

A Bioinspired Sensory‐CAPode With Dual Functionality: Logic Gate and Real‐Time Biosensing

Advanced Functional Materials, EarlyView.
An electrochemical capacitor diode (CAPode) redefines the frontier of iontronics by seamlessly unifying logic computing and biosensing within a single biocompatible platform. Inspired by nature's own ion‐channel circuitry, this elegant ionic system transforms complex chemical signals into precise electrical responses, paving the way for next‐generation
Hanfeng Zhou, Tianle Zheng, Haolin Jin, Xiongjun Zhou, Jiang Qu, Bilal Riaz, Ahmed Bahrawy, Jiajie Chen, Przemyslaw Galek, Julia Grothe, Stefan Kaskel   +10 more
wiley   +1 more source

Fusogenic RNA Nanomodules for Fusion‐Mediated and Multiplexed siRNA Delivery

Advanced Functional Materials, EarlyView.
A fusogenic lipid‐layered RNA nanomodules (L‐CRAMs) enable high‐capacity and long‐lasting siRNA delivery through membrane fusion. These nanomodules carry exceptionally large siRNA payloads, avoid conventional endosomal uptake, and release multiple functional siRNAs through Dicer‐mediated processing.
Sunghyun Moon, Iksoo Jang, Taehyeon Kim, Nayoung Yoon, Kyuha Yum, Jong Bum Lee   +5 more
wiley   +1 more source