Results 81 to 90 of about 85,724 (295)

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets [PDF]

, 2018
International audienceFor the first time, a comprehensive study going from the integration of 3D stacked nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed.
G. Audoit, Martinie, S., N. Rambal, T. Ernst, C. Vizioz, S. Martinie, B. Previtali, Vinet, M., A. Jannaud, Lacord, J., Rozeau, O., Hartmann, J.-M., S. Barraud, J. Lacord, N. Bernier, Loup, V., Romano, G., L. Dourthe, Vizioz, C., Audoit, G., J.-M. Hartmann, G. Romano, Chalupa, Z., Previtali, B., Rambal, N., Lapras, V., Barraud, S., O. Rozeau, Bernier, N., Balan, V., V. Lapras, Ernst, T., M. Vinet, Jannaud, A., Z. Chalupa, V. Delaye, Dourthe, L., Casse, M., Delaye, V., V. Loup, M. Casse, V. Balan   +41 more
core   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Raised S/D gate-all-around CMOS using MILC [PDF]

, 2002
Complementary metal oxide semiconductor (CMOS) gate-all-around transistors (GAT) with raised S/D was demonstrated. Steeper sub-threshold slope, better suppressing of drain-induced-barrier-lowering (DIBL) and short-channel-effect (SCE), higher drive ...
Chan, Philip C.H., Yin, Chunshan, Chan, Victor W.C.   +2 more
core  

Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs [PDF]

, 2019
International audienceVertical heterojunction Ge 0.92 Sn 0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported.
Grap, Thomas, Trellenkamp, Stefan, Buca, Dan, Liu, Mingshan, von den Driesch, Nils, Knoch, Joachim, Hartmann, Jean-Michel, Mertens, Konstantin, Zhao, Qing- Tai, Zhao, Qing-Tai   +9 more
core   +1 more source

The interface states in gate-all-around transistors (GAAFETs)

, 2023
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation framework based on atomistic models and ab initio quantum simulation is still absent.
Liu, Yue-Yang, Lu, Haoran, Wang, Zirui, Deng, Hui-Xiong, Zeng, Lang, Wei, Zhongming, Luo, Jun-Wei, Wang, Runsheng   +7 more
openaire   +2 more sources

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

A self-aligned gate-all-around MOS transistor on single-grain silicon [PDF]

, 2004
A self-aligned gate-all-around metal-oxide-semiconductor (MOS) transistor technology is proposed and demonstrated. The self-aligned structure is realized by first forming two dummy gates self-aligned to each other, and then replacing them with a real ...
Wang, Hongmei, Han, RQ, Chan, MS, Chan, Man Sun, Han, Ruqi, Zhang, Shengdong, Zhang, SD, Wang, HM   +7 more
core   +1 more source

Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

IEEE Journal of the Electron Devices Society, 2018
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im, Gokhan Atmaca, Chul-Ho Won, Raphael Caulmilone, Sorin Cristoloveanu, Yong-Tae Kim, Jung-Hee Lee   +6 more
doaj   +1 more source

Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh, R.S. Gupta, Sujata Pandey   +2 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source