Results 61 to 70 of about 85,432 (295)

Performance analysis of the Junction-less Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junction-less Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data

, 2021
This paper covers the Performance analysis of the Junctionless Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junctionless Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data.
PSIT COE, H (via Mendeley Data)
core   +1 more source

Does Long‐Term Lower Extremity Strength Training in Adults With Knee Osteoarthritis and Varus Alignment Reduce Knee Joint Loading During Gait?

Arthritis Care &Research, EarlyView.
Objective We examined whether 18 months of strength training in individuals with knee varus alignment and medial tibiofemoral osteoarthritis (OA) reduced knee joint loads during walking compared to an attention control group. Methods This study was a secondary analysis of a randomized clinical trial that compared the effects of strength training to a ...
Stephen P. Messier, Matthew N. Vigliotti, Paige E. Rice, Brian Pietrosimone, Shannon L. Mihalko, Edward H. Ip, Richard F. Loeser, David J. Hunter, Ali Guermazi, Ryan Hill, Santiago Saldana, Kim L. Bennell, Paul DeVita   +12 more
wiley   +1 more source

Additive Manufacturing of Continuous Fibre Reinforced Composites: Process, Characterisation, Modelling, and Sustainability

Advanced Engineering Materials, EarlyView.
Additive manufacturing provides precise control over the placement of continuous fibres within polymer matrices, enabling customised mechanical performance in composite components. This article explores processing strategies, mechanical testing, and modelling approaches for additive manufactured continuous fibre‐reinforced composites.
Cherian Thomas, Amir Hosein Sakhaei
wiley   +1 more source

An Experimental High‐Throughput Approach for the Screening of Hard Magnet Materials

Advanced Engineering Materials, EarlyView.
An entire workflow for the high‐throughput characterization and analysis of compositionally graded magnetic films is presented. Characterization protocols, data management tools and data analysis approaches are illustrated with test case Sm(Fe, V)12 based films.
William Rigaut, Pierre Le Berre, Hamdi Jaballah, Lukas Fink, Victor Poline, Richard Haettel, Stéphane Grenier, Gilbert Chahine, Ewen Bellec, Guillaume Buatier, Wilfried Hortschitz, Santa Pile, Thomas Schrefl, Nils Blanc, Yuan Hong, Thibaut Devillers, Nora M. Dempsey   +16 more
wiley   +1 more source

The interface states in gate-all-around transistors (GAAFETs)

, 2023
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation framework based on atomistic models and ab initio quantum simulation is still absent.
Liu, Yue-Yang, Lu, Haoran, Wang, Zirui, Deng, Hui-Xiong, Zeng, Lang, Wei, Zhongming, Luo, Jun-Wei, Wang, Runsheng   +7 more
openaire   +2 more sources

A Study Of Gate-All-Around Transistors By Electron Tomography [PDF]

AIP Conference Proceedings, 2009
Gate‐all‐around (GAA) SiGe nanowire transistor structures have been studied using high angle annular dark field (HAADF) STEM tomography. Sample preparation has been optimized by isolating single devices in needle‐shaped specimens, using annular milling in the focused ion beam (FIB). Using this technique, images can be acquired over a tilt range up to +/
P. D. Cherns, F. Lorut, S. Beçu, C. Dupré, K. Tachi, D. Cooper, A. Chabli, T. Ernst, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold   +14 more
openaire   +1 more source

Fabrication of Raised S/D Gate-All-Around Transistor and Gate Misalignment Analysis

, 2003
In this letter, we present the implementation of a new raised source/drain (S/D) gate-all-around transistor (GAT). The device is fabricated on a bulk silicon wafer using a technique known as metal-induced-lateral-crystallization (MILC).
Chan, Philip C.H., Yin, Chunshan, Chan, Victor W.C.   +2 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

IEEE Journal of the Electron Devices Society, 2018
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im, Gokhan Atmaca, Chul-Ho Won, Raphael Caulmilone, Sorin Cristoloveanu, Yong-Tae Kim, Jung-Hee Lee   +6 more
doaj   +1 more source

Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh, R.S. Gupta, Sujata Pandey   +2 more
doaj   +1 more source