Results 61 to 70 of about 18,442,309 (293)

Edge effects characterization in gate-all-around SOI MOSFETs

, 1998
The well-known edge effect due to conduction in the parasitic edge transistor at low gate voltages takes place when the threshold voltage is lowered at the device edges.
Flandre, Denis, Vandooren, Anne, Cristoloveanu, Sorin, IEEE International SOI Conference 1998, Colinge, Jean-Pierre   +4 more
core   +1 more source

The C‐terminal domain of yeast Arginyltransferase1 is essential for its catalytic activity

FEBS Open Bio, EarlyView.
Arginyltransferase 1 (Ate1), a eukaryotic enzyme, catalyses arginylation, transferring arginine from tRNA‐Arg to the amino terminus of the target protein. Overexpression of Ate1 in yeast is lethal and is dependent on arginylation. This study elucidates how mutations in the cofactor‐binding and active site of Ate1 and truncation of its structural ...
Vikas Kumar Yadav, Shweta Shweta, Manisha Malhotra, Vikash Maurya, Akhilesh Kumar   +4 more
wiley   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application

Nanomaterials
Cryogenic CMOS technology provides a promising approach to surpass the Boltzmann limit and advance Moore’s Law, addressing the increasing demand for high-performance computing. However, at cryogenic temperatures, the subthreshold swing (SS) of the device
Lewen Qian, Tao Liu, Meicheng Liao, Xinlong Guo, Saisheng Xu, Min Xu, David Wei Zhang   +6 more
doaj   +1 more source

Efficacy of Fampridine on Refractory Optic Neuritis in Neuromyelitis Optica Spectrum Disorders

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Background Neuromyelitis optica spectrum disorders (NMOSD) usually occur with acute refractory optic neuritis (ON). However, there is a lack of efficacious treatments to improve recovery. Since fampridine has been found to improve the prognosis of multiple sclerosis (MS) and MS‐related ON, it is necessary to explore the efficacy of fampridine ...
Hongxuan Wang, Wanru Chen, Xiangpen Li, Hengjian Lu, Chenguang Li, Xiaoni Zhang, Lulu Bu, Xiaoyu Xu, Qingyu Shen, Ying Peng   +9 more
wiley   +1 more source

High threshold voltage matching performance on gate-all-around MOSFET

, 2007
International audienceFor the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped
Harrison, S., Coronel, P., Pouydebasque, A., Cathignol, A., Cerrutti, R., Ghibaudo, G., Cros, A., Rochereau, K., Skotnicki, T.   +8 more
core   +1 more source

BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates.
Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +1 more
doaj   +1 more source

The content and reporting completeness of physical therapist‐led interventions for glenohumeral osteoarthritis: a systematic review

Arthritis Care &Research, Accepted Article.
Objectives This study synthesised the content and reporting completeness of published physical therapist‐led interventions for glenohumeral osteoarthritis (GHOA). Methods This systematic review undertook electronic database searches in PubMed, EMBASE, Cochrane, CINAHL and PEDro (until June 2025) for any peer‐reviewed articles/studies describing ...
Daha G Muhammad, Nadine E Foster, Mickylle Pelaez, Karina O'Leary, Ilana N Ackerman, Jonathan G Quicke   +5 more
wiley   +1 more source

Two-dimensional confinement effects in gate-all-around (GAA) MOSFETS

, 1998
Two-dimensional electron confinement effects have been modeled and experimentally observed in silicon-on-insulator (SOI) gate-all-around (GAA) MOSFETs. Solving the Poisson and Schrodinger equations in a self-consistent manner provides the electron wave ...
X. Baie, J.P. Colinge, Colinge, JP., Baie, X.   +3 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source