Results 71 to 80 of about 85,432 (295)

The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistor

, 2013
In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional
Shengju Zhong, He, Hongyu, Sheng Chang, He, Qingxing, Chang, Sheng, Hu, Yue, He, Jin, Du, Caixia, Hao Wang, Jin He, Caixia Du, Hongyu He, Qingxing He, Zhong, Shengju, Cheng Wang, Wang, Cheng, Yue Hu, Wang, Hao   +17 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs

, 2011
In this paper, an analytical model for parasitic gate capacitances in gate-all-around cylindrical silicon nanowire MOSFETs (SNWTs) is developed for the first time. A practical 3-D architecture of SNWTs with surrounding-gate cylindrical channel and source/
Luo, Jieying, null Qiumin Xu, Xu, Qiumin, null Yangyuan Wang, null Jieying Luo, null Jibin Zou, Wang, Yangyuan, Wang, Runsheng, Zou, Jibin, null Runsheng Wang, null Ru Huang, Huang, Ru   +11 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

, 2021
A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation.
Jae-Min Sim, Bong-Seok Kim, In-Ho Nam, Yun-Heub Song   +3 more
core   +1 more source

Swelling‐Programmed Topographical Guidance for Dynamic Spheroid Self‐Assembly via a Mechanochemical Hydrogel Niche

Advanced Functional Materials, EarlyView.
A swelling‐programmed micropatterned hydrogel guides adherent cells through a controlled transition from cell–matrix anchoring to cadherin‐mediated cell–cell compaction, enabling rapid assembly of high‐viability spheroids with defined size and morphology.
Han Gyeol Nam, Seon Yeong Chae, Young Woo Kwon, Hye Jin Heo, Hye Rin Lee, Ji Hyeok Lee, Dong‐Wook Han, Yun Hak Kim, Suck Won Hong   +8 more
wiley   +1 more source

Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications

Advanced Electronic Materials
Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface‐driven transport phenomena due to their high surface‐to‐volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states
Aniello Pelella, Valeria Demontis, Andrea Sessa, Adolfo Mazzotti, Filippo Giubileo, Valentina Zannier, Lucia Sorba, Francesco Rossella, Antonio Di Bartolomeo   +8 more
doaj   +1 more source

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

, 2010
An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA) MOSFETs is presented in this work. The fringing field from the gate to underlap regions is derived by using channel length transformation and conformal mapping ...
Zhang, Lining, Ma, Chenyue, Chan, Mansun, He, Jin, Lin, Xinnan   +4 more
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product

, 2023
High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of ...
Lukas Hrachowina (4915849), Hossein Jeddi, Kristi Adham, Håkan Pettersson, Bernd Witzigmann (7969796), Magnus T. Borgström (1301175), Håkan Pettersson (4719903), Magnus T. Borgström, Kristi Adham (15845763), Hossein Jeddi (15845760), Lukas Hrachowina, Bernd Witzigmann   +11 more
core   +1 more source