Results 71 to 80 of about 18,442,309 (293)

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET

, 2010
In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed.
Zhang, Lining, He, Frank, Guo, Xinjie, Zhang, Chenfei, Chan, Mansun, Wang, Shaodi, Lining Zhang, null Chenfei Zhang, null Frank He, null Xinjie Guo, null Shaodi Wang, Mansun Chan   +11 more
core   +1 more source

Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

IEEE Journal of the Electron Devices Society, 2018
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im, Gokhan Atmaca, Chul-Ho Won, Raphael Caulmilone, Sorin Cristoloveanu, Yong-Tae Kim, Jung-Hee Lee   +6 more
doaj   +1 more source

Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]

Журнал нано- та електронної фізики, 2017
Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh, R.S. Gupta, Sujata Pandey   +2 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect Transistors

, 2011
Electrostatic discharge (ESD) performance, including trigger voltage, failure current, on-resistance and leakage current, of the gate-all-around silicon nanowire field-effect transistor depends on nanowire diameter, gate length and nanowire numbers.
Juin J. Liou, Chung, J., N. Singh, Lo, G. Q., G. Q. Lo, Liou, J. J., Singh, N., Liu, W., J. Chung, Wen Liu, Y. H. Jeong   +10 more
core   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications

Advanced Electronic Materials
Suspended indium arsenide (InAs) nanowires offer a unique platform for studying surface‐driven transport phenomena due to their high surface‐to‐volume ratio and the absence of dielectric interfaces. In this work, we investigate the role of surface states
Aniello Pelella, Valeria Demontis, Andrea Sessa, Adolfo Mazzotti, Filippo Giubileo, Valentina Zannier, Lucia Sorba, Francesco Rossella, Antonio Di Bartolomeo   +8 more
doaj   +1 more source

Conformational Switching of Proteins on Material Surfaces Enabled by Peptide‐Oriented Adsorption

Advanced Functional Materials, EarlyView.
Responsive biointerfaces could be achieved using conformationally responsive proteins; however, their interconversion can be lost upon surface adsorption. Herein, we demonstrate that the incorporation a Au binding peptide into calmodulin allows for binding control on Au wherein the protein retains conformational switching. This capability was confirmed
Sakthirupini Ramamurthy, Kyle B. Meerbott, Lorenzo Travaglini, Garima S. Dobhal, Artur Sawicki, Marc R. Knecht, Tiffany R. Walsh, Dominic J. Glover   +7 more
wiley   +1 more source