Results 51 to 60 of about 85,432 (295)

Interpreting the effects of DNA polymerase variants at the structural level

Molecular Oncology, EarlyView.
Using MAVISp and molecular dynamics simulations, we analyzed over 60 000 missense variants in POLE and POLD1 from ClinVar, COSMIC, cBioPortal, and saturation mutagenesis. Identified mechanistic indicators, including stability, binding, and long‐range, enable structural interpretation, providing ACMG‐like evidence for possible reclassification of VUS ...
Matteo Arnaudi, Karolina Krzesińska, Ludovica Beltrame, Pablo Sánchez‐Izquierdo Besora, Matteo Tiberti, Mef Nilbert, Anna Rohlin, Elena Papaleo   +7 more
wiley   +1 more source

MITF maintains genome stability in nonmelanocyte lineages

Molecular Oncology, EarlyView.
MITF is essential for melanocyte survival and acts as an oncogene in 10%–20% of melanomas. We show that MITF depletion causes genome instability in nonmelanocytic cells, leading to LATS2‐mediated P53 activation, cell cycle arrest, and apoptosis. This study highlights the role of MITF as a genome maintenance factor beyond the melanocyte lineage. Created
Drifa H. Gudmundsdottir, Adrián López García de Lomana, Thejus B. Venkatesh, Kritika Kirty, Snaevar Sigurdsson, Linda Vidarsdottir, Ramile Dilshat, Erla Sveinbjornsdottir, Snaedis Ragnarsdottir, Daniel H Magnusson, Maria R. Bustos, Eirikur Steingrimsson, Thorkell Gudjonsson, Stefan Sigurdsson   +13 more
wiley   +1 more source

Edge effects characterization in gate-all-around SOI MOSFETs

, 1998
The well-known edge effect due to conduction in the parasitic edge transistor at low gate voltages takes place when the threshold voltage is lowered at the device edges.
Flandre, Denis, Vandooren, Anne, Cristoloveanu, Sorin, IEEE International SOI Conference 1998, Colinge, Jean-Pierre   +4 more
core   +1 more source

YlmG1 is localized exclusively to the chloroplast envelope membrane and is involved in preprotein translocation in Arabidopsis thaliana

FEBS Open Bio, EarlyView.
Cytosolically synthesized chloroplast preproteins are translocated across the outer and inner envelope membranes through translocons called TOC and TIC, respectively. In green algae and plants, the TIC core is composed of essential membrane proteins, Tic12, Tic20, and Tic214.
Mengyi Li, Xueyang Zhao, Masato Nakai
wiley   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application

Nanomaterials
Cryogenic CMOS technology provides a promising approach to surpass the Boltzmann limit and advance Moore’s Law, addressing the increasing demand for high-performance computing. However, at cryogenic temperatures, the subthreshold swing (SS) of the device
Lewen Qian, Tao Liu, Meicheng Liao, Xinlong Guo, Saisheng Xu, Min Xu, David Wei Zhang   +6 more
doaj   +1 more source

A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet

, 2020
The Double-Gate and Gate-all-Around are said to be the promising candidates to pursue Complementary-Metal-Oxide Semiconductor scaling. When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor ...
Kosmani, Nor Fareza
core  

Optimizing photoactivation of PA‐mCherry for optical pooled CRISPR screens

FEBS Open Bio, EarlyView.
Photoactivatable PA‐mCherry finds widespread use to optically tag individual cells. However, confocal 405 nm UV laser‐scanning (normal scan) is much less efficient than widefield UV illumination, limiting the use of PA‐mCherry on confocal instruments. We remedy this limitation by reporting that rapid and repeated confocal scanning with a low‐intensity,
Sravasti Mukherjee, Giulia Zanetti, Bram van den Broek, Kees Jalink   +3 more
wiley   +1 more source

BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates.
Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +1 more
doaj   +1 more source

Conical surrounding gate MOSFET: a possibility in gate-all-around family

Advances in Natural Sciences: Nanoscience and Nanotechnology, 2016
In this paper a new conical surrounding gate metal-oxide-semiconductor field effect transistor (MOSFET) with triple-material gate has been proposed and verified using TCAD device simulator from Synopsis. The electrostatic performance of conical model with different tapering ratios is extensively investigated and compared with that of cylindrical model (
B Jena, B S Ramkrishna, S Dash, G P Mishra   +3 more
openaire   +1 more source

Polarity Control in Double-Gate, Gate-All-Around Vertically Stacked Silicon Nanowire FETs [PDF]

, 2012
We fabricated and characterized ambipolar Silicon Nanowire (SiNW) FET transistors featuring two independent Gate-All-Around (GAA) electrodes and vertically stacked SiNW channels.
De Micheli, Giovanni, S. Frache, Zhang, Jian, J. Zhang, Sacchetto, Davide, G. De Micheli, Gaillardon, Pierre-Emmanuel Julien Marc, Leblebici, Yusuf, De Marchi, Michele, D. Sacchetto, M. De Marchi, P.-E. Gaillardon, Frache, Stefano, Y. Leblebici   +13 more
core   +1 more source