A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet [PDF]
, 2020 The Double-Gate and Gate-all-Around are said to be the promising candidates to pursue Complementary-Metal-Oxide Semiconductor scaling. When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor ...
Kosmani, Nor Fareza
core
An Analytical Gate-All-Around MOSFET Model for Circuit Simulation
Advances in Materials Science and Engineering, 2015 A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length.
Kuan-Chou Lin +2 more
doaj +1 more source
Performance analysis of the Junction-less Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junction-less Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data [PDF]
, 2021 This paper covers the Performance analysis of the Junctionless Gate All Around (JL-GAA) MOSFET and Charge Plasma Technique based Junctionless Gate All Around (CPT-JL-GAA) MOSFET on Experimental Data.
PSIT COE, H (via Mendeley Data)
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IEEE Access, 2023 A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun +6 more
doaj +1 more source
Fabrication of Raised S/D Gate-All-Around Transistor and Gate Misalignment Analysis [PDF]
, 2003 In this letter, we present the implementation of a new raised source/drain (S/D) gate-all-around transistor (GAT). The device is fabricated on a bulk silicon wafer using a technique known as metal-induced-lateral-crystallization (MILC).
Chan, Philip C.H. +2 more
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The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistor [PDF]
, 2013 In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional
Shengju Zhong +17 more
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Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs [PDF]
, 2011 In this paper, an analytical model for parasitic gate capacitances in gate-all-around cylindrical silicon nanowire MOSFETs (SNWTs) is developed for the first time. A practical 3-D architecture of SNWTs with surrounding-gate cylindrical channel and source/
Luo, Jieying +11 more
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Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor [PDF]
Журнал нано- та електронної фізики, 2017 This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device.
ManjulaВ Vijh +2 more
doaj +1 more source
Molecular Oncology, EarlyView.Cytarabine is a key therapy for acute myeloid leukaemia (AML), but its efficacy is limited by the dNTPase SAMHD1, which hydrolyses its active metabolite. Screening nucleotide biosynthesis inhibitors revealed that IMPDH inhibitors selectively sensitise SAMHD1‐proficient AML cells to cytarabine.
Miriam Yagüe‐Capilla +9 more
wiley +1 more source
Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation [PDF]
, 2021 A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation.
Jae-Min Sim +3 more
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