Results 221 to 230 of about 18,442,309 (293)

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

Advanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su, Yanda Zhu, Hao Peng, Manman Li, Xuzihan Zhang, Meixiao Wu, Siyuan Zhang, Yuhan Zeng, Jiwen Liao, Ming Luo, Hetaishan Huang, Yutong Wang, Sean Li, Wenxian Li   +13 more
wiley   +1 more source

Ultrasound‐Activatable Piezoelectric Hydrogel Reprograms Mitochondrial Epigenetics for Osteoarthritis Therapy via the mTOR/GATD3A Axis

Advanced Science, EarlyView.
An ultrasound‐activatable piezoelectric hydrogel reprograms chondrocyte mitochondrial epigenetics via the mTOR/GATD3A axis, clearing damaged mitochondria and alleviating osteoarthritis progression in both mouse models and human cartilage explants. ABSTRACT The avascular nature of cartilage hinders drug delivery for osteoarthritis (OA) therapy.
Hui Zheng, Pengfei Yan, Peng Liu, Chang Yan, Mengqi Zhao, Zuyong Wang, Chao Ma, Rongkai Zhang, Xi Cui, Swee Hin Teoh   +9 more
wiley   +1 more source

Nanomaterials for Allergy Diagnosis and Treatment: Advances, Opportunities and Translational Challenges

Advanced Science, EarlyView.
Nanomaterials offer dual applications in allergy management. For diagnosis, nanomaterials enhance analytical sensitivity and improve detection in specific IgE and functional assays such as the basophil activation test (BAT). For allergen‐specific immunotherapy, nanomaterials enable allergen masking and controlled release, and effectively modulate the ...
Madiha Habib, Shan Jiang, Joyce ZX Lee, CW Lim, HL Yeung, Nicki YH Leung, Patrick SC Leung, Ting F Leung, Christine YY Wai   +8 more
wiley   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

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TDDB Reliability in Gate-All-Around Nanosheet

2021 IEEE International Reliability Physics Symposium (IRPS), 2021
Time dependent dielectric breakdown (TDDB) reliability is studied on interfacial layer (IL)/high-K gate stack of Gate-All-Around Nanosheet (GAA-NS) N- and P-type Field Effect Transistors (FETs) with volume-less multiple threshold voltage (multi-Vt) integration scheme enabled by the dual dipoles (n-dipole and p-dipole).
Huimei Zhou, Miaomiao Wang 0006, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo   +8 more
openaire   +2 more sources

Modeling of gate leakage in cylindrical gate-all-around transistors

Journal of Computational Electronics, 2021
Gate-all-around field-effect transistors deliver the best inversion layer control among the family of multi-gate transistors and are proving to be the promising architecture for logic nodes beyond 10 nm. Sub-10 nm devices typically have effective oxide thickness below 1 nm and a higher mobility channel for faster switching.
Ravi Solanki, Saniya Minase, Ashutosh Mahajan, Rajendra Patrikar   +3 more
openaire   +1 more source

Analysis of back gate and gate all around CNTFET structure

Proceedings of the International Conference & Workshop on Emerging Trends in Technology, 2011
Current CMOS technology has put forth many challenges like scaling issues, short channel effects, etc. The various remedies proposed to solve these include the use of strained silicon, silicon on insulator structure, double, tri-gate and Gate All around structures for CMOS, use of Graphene and Carbon Nanotube (CNT) devices, quantum cellular automata ...
M. R. Tambekar, S. R. Nade, A. Gajarushi
openaire   +1 more source

Introduction of Gate-All-Around FET (GAAFET)

Applied and Computational Engineering, 2023
The Gate-All-Around Field-Effect Transistor (GAAFET) represents a significant advancement in integrated circuits technology, offering enhanced functionality compared to its predecessor, the Fin Field-Effect Transistor (FinFET). This paper provides a comprehensive overview of GAAEFT, its historical developments, current state, and recent developments ...
Chengzhen Xie, Yuxin Zhang, Kexin Zhang, Leon Zi-Run Guo   +3 more
openaire   +1 more source

Corner effects in double-gate/gate-all-around MOSFETs

Chinese Physics, 2007
Two kinds of corner effects existing in double-gate (DG) and gate-all-around (GAA) MOSFETs have been investigated by three-dimensional (3D) and two-dimensional (2D) simulations. It is found that the corner effect caused by conterminous gates, which is usually deemed to deteriorate the transistor performance, does not always play a negative role in GAA ...
Hou Xiao-Yu, Zhou Fa-Long, Huang Ru, Zhang Xing   +3 more
openaire   +1 more source