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Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs
IEEE Transactions on Electron Devices, 2006Compact-modeling principles and solutions for nanoscale double-gate and gate-all-around MOSFETs are explained. The main challenges of compact modeling for these devices are addressed, and different approaches for describing the electrostatics, the transport mechanisms, and the high-frequency behavior are explained. Several approximations used to derive
Iniguez, B. +4 more
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Localized thermal effects in Gate-all-around devices
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Colin Landon +6 more
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From Gate-all-Around to Nanowire MOSFETs
2007 International Semiconductor Conference, 2007The classical MOSFET is reaching its scaling limits and "end-of-roadmap" alternative devices are being investigated. Amongst the different types of SOI devices proposed, one clearly stands out: the multigate field-effect transistor (multigate FET). This device has a general "wire-like" shape.
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Fabrication of the SiC Gate-All-Around JFET
IEEE Transactions on Electron Devices, 2023Masaya Mochizuki +3 more
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Gate-All-Around Technology is Coming.
Proceedings of the 2023 International Symposium on Physical Design, 2023openaire +2 more sources
Demonstrating Scalable Randomized Benchmarking of Universal Gate Sets
Physical Review X, 2023Jordan Hines +2 more
exaly
Dual-Gate Thin-Film Transistors, Integrated Circuits and Sensors
Advanced Materials, 2011Dago de Leeuw, Kris Myny, Paul W M Blom
exaly