Results 91 to 100 of about 2,685 (171)

N-Type Nanosheet FETs without Ground Plane Region for Process Simplification. [PDF]

Micromachines (Basel), 2022
Lee KS, Park JY.
europepmc   +1 more source

SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview. [PDF]

Micromachines (Basel), 2022
Gul W, Shams M, Al-Khalili D.
europepmc   +1 more source

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. [PDF]

Nanomaterials (Basel), 2021
Zhang Q, Gu J, Xu R, Cao L, Li J, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J.   +19 more
europepmc   +1 more source

Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Li J, Gao Y, Zhang DW.
europepmc   +1 more source

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory
application/pdf 学術論文 (Article) 294853 ...
openaire  

Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiN_x Stress-Engineered Technique. [PDF]

Nanomaterials (Basel)
Deng C, Tang C, Wang P, Cheng WC, Du F, Wen K, Zhang Y, Jiang Y, Tao N, Wang Q, Yu H.   +10 more
europepmc   +1 more source

Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter. [PDF]

Micromachines (Basel)
Wang B, Tang Z, Song Y, Liu L, Yang W, Wu L.   +5 more
europepmc   +1 more source

Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Kola SR, Li Y.
europepmc   +1 more source

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors. [PDF]

Sensors (Basel), 2019
Chao CY, Yeh SF, Wu MH, Chou KY, Tu H, Lee CL, Yin C, Paillet P, Goiffon V.   +8 more
europepmc   +1 more source

Ultralow-power LSI Technology with Silicon on Thin Buried Oxide (SOTB) CMOSFET [PDF]

, 2010
Nobuyuki Sugii, Ryuta Tsuchiya, Shin’ichiro Kimura, Takashi Ishigaki, Yusuke Morita   +4 more
core   +2 more sources