Results 111 to 120 of about 3,848,811 (155)

High performance Si-MoS₂ heterogeneous embedded DRAM. [PDF]

Nat Commun
Xiao K, Wan J, Xie H, Zhu Y, Tian T, Zhang W, Chen Y, Zhang J, Zhou L, Dai S, Xu Z, Bao W, Zhou P.   +12 more
europepmc   +1 more source

Memory characteristics of silicon nanowire transistors generated by weak impact ionization. [PDF]

Sci Rep, 2017
Lim D, Kim M, Kim Y, Kim S.
europepmc   +1 more source

All WSe₂ 1T1R resistive RAM cell for future monolithic 3D embedded memory integration. [PDF]

Nat Commun, 2019
Sivan M, Li Y, Veluri H, Zhao Y, Tang B, Wang X, Zamburg E, Leong JF, Niu JX, Chand U, Thean AV.   +10 more
europepmc   +1 more source

A Constant Energy-Per-Cycle Ring Oscillator Over a Wide Frequency Range for Wireless Sensor Nodes. [PDF]

IEEE J Solid-State Circuits, 2016
Lee I, Sylvester D, Blaauw D.
europepmc   +1 more source

High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits. [PDF]

Sci Rep, 2017
Wu TT, Huang WH, Yang CC, Chen HC, Hsieh TY, Lin WS, Kao MH, Chen CH, Yao JY, Jian YL, Hsu CC, Lin KL, Shen CH, Chueh YL, Shieh JM.   +14 more
europepmc   +1 more source

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory. [PDF]

Materials (Basel), 2010
Sakai S, Takahashi M.
europepmc   +1 more source

Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting. [PDF]

Sensors (Basel), 2016
Guidash M, Ma J, Vogelsang T, Endsley J.
europepmc   +1 more source

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. [PDF]

Nanomaterials (Basel)
Radamson HH, Miao Y, Zhou Z, Wu Z, Kong Z, Gao J, Yang H, Ren Y, Zhang Y, Shi J, Xiang J, Cui H, Lu B, Li J, Liu J, Lin H, Xu H, Li M, Cao J, He C, Duan X, Zhao X, Su J, Du Y, Yu J, Wu Y, Jiang M, Liang D, Li B, Dong Y, Wang G.   +30 more
europepmc   +1 more source

Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

IEEE Electron Device Letters, 2009
A soft-programming-free operation method in unified RAM (URAM) is presented. An oxide/nitride/oxide (O/N/O) layer and a floating-body are integrated in a FinFET, thereby providing the versatile functions of a high-speed capacitorless 1T-DRAM, as well as nonvolatile memory, and the mode of the memory cell can be selected and independently utilized ...
Yang-Kyu Choi, Jin-Woo Han, Sung-Jin Choi   +2 more
exaly   +4 more sources

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Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs

Current Applied Physics, 2020
Abstract The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC FinFET.
Changhwan Shin, Gihun Choe
exaly   +2 more sources