Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation. [PDF]
Discov Nano, 2023 Lin JT, Chang YC.
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The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs. [PDF]
Sci Rep, 2023 Ahmad MA, Kumar J.
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Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM. [PDF]
Micromachines (Basel), 2022 Sun M, Baac HW, Shin C.
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Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
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Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress
, 1992 Some holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases.
Lai, Pui T, Ma, ZJ, Cheng, YC
core
Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs
, 1999 Degradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a ...
Xu, Jingping, Lai, PT
core
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
, 2009 In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
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N-Type Nanosheet FETs without Ground Plane Region for Process Simplification. [PDF]
Micromachines (Basel), 2022 Lee KS, Park JY.
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Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication-A Nanomaterial Approach. [PDF]
Nanomaterials (Basel), 2022 Gowthaman N, Srivastava VM.
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A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler. [PDF]
Microsyst NanoengKwak B +12 more
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