Results 81 to 90 of about 301 (157)

GIDL 스트레스 조건 하에서 나노 크기 PMOSFET 열화 분석 [PDF]

, 2017
학위논문 (석사)-- 서울대학교 대학원 공과대학 전기·정보공학부, 2017. 8. 이종호.The device degradation under gate-induced drain leakage (GIDL) mode stress is studied in nano-scale p-MOSFET for DRAM peripheral circuit.
조수앙
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Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique

, 2001
In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar
AATISH KUMAR, Dunga, M. V., Ramgopal Rao, V., DUNGA, MOHAN V, Kumar, A., RAMGOPAL RAO, V   +5 more
core   +1 more source

Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique

, 2002
Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional ...
VASI, J, Vasi, J., Ramgopal Rao, V., Woo, J. C. S., Cheng, Baohong, Kumar, A., CHENG, B, AATISH KUMAR, Najeev-ud-din,, WOO, JCS, Dunga, M. V., DUNGA, MV, NAJEEB-UD-DIN HAKIM, RAMGOPAL RAO, V   +13 more
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Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress

, 1992
Some holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases.
Lai, Pui T, Ma, ZJ, Cheng, YC
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High field induced stress suppression of GIDL effects in TFTs

, 2010
Gate-Induced drain leakage (GIDL) is an unwanted short-channel effect that occurs at higher drain biases in an overdriven off state of a transistor. The GIDL is the result of a deep depletion region that forms in the drain at high drain-to-gate biases ...
McCabe, Andrew
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Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs

, 1999
Degradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a ...
Xu, Jingping, Lai, PT
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ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
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Greatly suppressed stress-induced shift of GIDL in N 2O-based n-MOSFET's

, 1998
Considerably suppressed gate-induced drain leakage (GIDL) shifts of N 2O-based n-MOSFET's after hot-carrier stress with different gate voltages are observed.
Lo, HB, J.P Xu, H.B Lo, Lai, PT, Xu, JP, L Huang, Y.C Cheng, Huang, L, Cheng, YC, P.T Lai   +9 more
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Novel design of multiple negative-differential resistance (NDR) device in a 32nm CMOS technology using TCAD

, 2013
We propose a novel multiple negative differential resistance (NDR) device with the positive inclined tri-state voltage transfer characteristics (VTC) between drain and gate of 32nm n-type MOSFET based on gate-induced drain leakage (GIDL) enhanced off ...
Sunhae Shin, Kyung Rok Kim, Kim, Kyung Rok, Sing, Sunhae   +3 more
core   +1 more source

GIDL 전류를 이용한 열 전달 감지 [PDF]

, 2018
학위논문 (박사)-- 서울대학교 대학원 : 공과대학 전기·컴퓨터공학부, 2018. 8. 박병국, 박영준.We report a method and experiment to detect the transport of the lattice phonons generated by hot electrons during the MOSFET operation.
유낙원
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