Results 61 to 70 of about 301 (157)

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

, 2012
This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics.
Rodrigues, M., Galeti, M., M. Galeti, Martino, Joao Antonio, Claeys, C., E. Simoen, C. Claeys, M. Rodrigues, J.A. Martino, N. Collaert, Collaert, N., Simoen, E.   +11 more
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The Impact of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETs for Low Power Device

, 2018
In this research, we investigated the impact of Gate-Induced Drain Leakage (GIDL) on scaled Metal-OxideSemiconductor Field-Effect Transistor (MOSFET) for low power application.
Hanim, A.R.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Mohd Zain, A.S.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., AH, AM; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Idris, S.K.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Hazura, H.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Ngelayang, T.B.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Salehuddin, F.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.   +6 more
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On the Conduction Mechanism in Diamond 2-D Hole Gas Field Effect Transistors

IEEE Access
Diamond two-dimensional hole gas (2DHG) field-effect transistors are an emerging device class with significant practical potential. To date, hole mobility in such devices has been largely assessed using Hall effect measurements, with only limited ...
Andrew J. Walker, Mina-Elraheb Hanna, Braden Henderson, Ludwig Galambos   +3 more
doaj   +1 more source

Characterization & Modeling of Gate-Induced-Drain-Leakage with complete overlap and fringing model

This paper investigates and models Gate Induced Drain Leakage (GIDL) for a wide variety of high voltage devices with different low doped drain (LDD) structures.
Jaouen, H., Manceau, J. P., Quenette, V., Tavernier, C., Weybright, M., Rideau, D., Garetto, D., Dornel, E., Saxod, O.   +8 more
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Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

, 2010
We generated traps inside gate oxide in gate–drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler–Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time ...
Heesang Kim, Hyungcheol Shin, Jae-Goan Jeong, Byoungchan Oh, Sung-Joo Hong, Jong-Ho Lee, Byung-Gook Park, Seon-Yong Cha, Kyungdo Kim   +8 more
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Interface-state-induced degradation of GIDL current in n-MOSFETsunder hot-carrier stress [PDF]

, 1996
The dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET's on creation of interface states (ΔDit) during hot-carrier stress with VG = 0.5 VD was investigated.
Lai, PT, Zeng, X, Xu, JP, Liu, BY
core   +1 more source

A String-Select-Line Separation Patterning Scheme for Low Voltage and High-Speed Program Operation in 3D NAND Flash Memory With Separated Source-Line

IEEE Access
In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a separated Source-Line (SL).
Jae-Min Sim, Hakyeong Kim, Yun-Heub Song
doaj   +1 more source

The Effect of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETS of Low Power Consumptions

, 2017
This project is aimed to study the impact of GateInduced Drain Leakage (GIDL) on scaled Metal-OxideSemiconductor Field-Effect Transistor (MOSFET) for low power efficient application. The MOSFET is operated with low power consumption. Microchip industries
Hassan, Nornikman; Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Ngelayang, Thailis Bounya; Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Noor Azizi, Muhammad Syafiq; Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Putra, Mohd Hasbullah; Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia., Bolqiah Edrisa, Muhammad Zuhair; Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.   +4 more
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1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks (RNNs), offers a promising framework for efficient temporal processing with minimal training overhead.
Md Yasir Bashir, Lalith Adithya Sai C., Shubham Sahay   +2 more
doaj   +1 more source

GIDL characteristics on Si1-xGex pFinFET for Low Power Transistors [PDF]

, 2016
학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 신형철.This dissertation presents an investigation of Gate-Induced-Drain-Leakage (GIDL) current in SiliconGermanium (SiGe) p-type FinFET for low power transistors and proposes the guidelines to reduce GIDL current.
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