Results 131 to 140 of about 2,685 (171)

A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]

IEEE Transactions on Electron Devices, 2000
Gate induced drain leakage (GIDL) is frequently described by band-to-band tunneling. This mechanism is insensitive to temperature and occurs only under strong electric fields. Under the condition of small electric fields, however, GIDL exhibits a strong dependence on temperature, which is due to trap-assisted generation of electron hole pairs.
M. Rosar, B. Leroy, G. Schweeger
openaire   +2 more sources

Gate induced drain leakage in nanowire gate all around field effect transistors and methods to reduce GIDL

AIP Conference Proceedings, 2023
Anhao Zhang
openaire   +2 more sources

1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
Puget, S., Bossu, G., Berthollet, F., Mazoyer, P., Portal, Jean-Michel, Masson, P., Bouchakour, R., Skotnicki, T.   +7 more
openaire   +3 more sources

The Enhancement of Gate-Induced-Drain-Leakage (gidl) Current in Soi Mosfet and its Impact on Soi Device Scaling

IEEE International SOI Conference, 2005
null Jian Chen, F. Assaderaghi, null Ping-Keung Ko, null Chenming Hu   +3 more
openaire   +2 more sources

Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices

Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002
Yang-Kyu Choi, Daewon Ha, Tsu-Jae King, Jeffrey Bokor   +3 more
openaire   +2 more sources

Dielectric pocket engineered, gate induced drain leakages (GIDL) and analog performance analysis of dual metal nanowire ferroelectric MOSFET (DPE-DM-NW-Fe FET) as an inverter

Microsystem Technologies
Shalu Garg, Jasdeep Kaur, Anubha Goel, Subhasis Haldar, R. S. Gupta   +4 more
openaire   +2 more sources

GIDL (gate-induced drain leakage) and parasitic schottky barrier leakage elimination in aggressively scaled HfO/sub 2/TiN FinFET devices

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005
We demonstrate that for aggressively scaled FinFETs, with 2nm HfO 2 and TiN metal gate (i.e., workfunction close to midgap), several parasitic leakage mechanisms that impact the off-state current become dominant. We provide a detailed characterization of these mechanisms as well as design guidelines for eliminating them by careful junction dopant ...
T. Hoffmann, A. Dixit, K. De Meyer, M. Jurczak, S. Biesemans, G. Doornbos, I. Ferain, N. Collaert, P. Zimmerman, M. Goodwin, R. Rooyackers, A. Kottantharayil, Y. Yim   +12 more
openaire   +1 more source

Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET

Microsystem Technologies, 2017
In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET to enhance the device reliability. Dual Metal Dielectric Engineered Gate All Around (DMDEGAA) MOSFET has been compared with
Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal, R. S. Gupta   +4 more
openaire   +1 more source

A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current

IEEE Electron Device Letters, 2023
A charge pumping (CP) technique with gate-induced drain leakage (GIDL) current is proposed to extract interface trap density ( ${N}_{\text {it}}{)}$ in GAA MOSFETs.
Geon-Beom Lee, Jeongyoong Kim, Yang-Kyu Choi   +2 more
semanticscholar   +1 more source

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

IEEE Electron Device Letters, 2023
In this study, the gate induced drain leakage (GIDL) of Si p-FinFET and its recovery effect on hot carrier degradation (HCD) were experimentally studied to further its physical understanding.
Hao Chang, Qianqian Liu, Hong Yang, Longda Zhou, Zhigang Ji, Bo Tang, Qingzhu Zhang, H. Yin, A. Du, Junfeng Li, Jun Luo, Wenwu Wang   +11 more
semanticscholar   +1 more source