Results 141 to 150 of about 301 (157)

Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

Japanese Journal of Applied Physics, 2003
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The
Choi, YK Choi, Yang-Kyu, Ha, D, King, TJ, Bokor, J   +3 more
openaire   +1 more source

Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance

2017 Devices for Integrated Circuit (DevIC), 2017
In this paper a Dual Metal Insulated Shallow Extension Gate All Around (DMISEGAA) MOSFET has been proposed to solve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET for improved analog performance. DMISEGAA MOSFET improves gate leakages by minimizing the tunneling from Valence Band to Conduction Band
Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal, R. S. Gupta   +4 more
openaire   +1 more source

A design of a capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for low-power and high-speed embedded memory

IEEE International Electron Devices Meeting 2003, 2004
A capacitorless 1T DRAM cell using gate-induced drain leakage (GIRL) current for write operation was demonstrated for the first time. Compared with the conventional write operation with impact ionization current, write operation with GIDL current provides low-power and high-speed operation. The capacitorless 1T-DRAM is the most promising technology for
E. Yoshida, T. Tanaka
openaire   +1 more source

The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

IEEE Electron Device Letters, 1992
An off-state leakage current unique for short-channel SOI MOSFETs is reported. This off-state leakage is the amplification of gate-induced-drain-leakage current by the lateral bipolar transistor in an SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1/4 mu m SOI devices.
J. Chen, F. Assaderaghi, P.-K. Ko, C. Hu
openaire   +1 more source

Effects of Externally Applied Uniaxial Tensile Stress on Gate Induced Drain Leakage (GIDL) Current of Metal-Oxide-Semiconductor Transistors

ECS Meeting Abstracts, 2011
Abstract not Available.
openaire   +1 more source

Gate induced drain leakage in nanowire gate all around field effect transistors and methods to reduce GIDL

AIP Conference Proceedings, 2023
openaire   +1 more source

1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
Puget, S., Bossu, G., Berthollet, F., Mazoyer, P., Portal, Jean-Michel, Masson, P., Bouchakour, R., Skotnicki, T.   +7 more
openaire   +2 more sources

Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices

Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002
Yang-Kyu Choi, Daewon Ha, Tsu-Jae King, Jeffrey Bokor   +3 more
openaire   +1 more source

The Enhancement of Gate-Induced-Drain-Leakage (gidl) Current in Soi Mosfet and its Impact on Soi Device Scaling

IEEE International SOI Conference, 2005
null Jian Chen, F. Assaderaghi, null Ping-Keung Ko, null Chenming Hu   +3 more
openaire   +1 more source

Design of SOI FinFET on 32nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Solid-State Electronics, 2010
Seongjae Cho, Shin-Ichi O'Uchi, Kazuhiko Endo   +2 more
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