Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing [PDF]
Nano Convergence, 2023 In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas.
Markus Hellenbrand +1 more
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Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures [PDF]
Nanomaterials, 2022 Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor ...
Yuan-Dong Xu +7 more
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Hafnium carbide formation in oxygen deficient hafnium oxide thin films [PDF]
Applied Physics Letters, 2016 On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 {\deg}C is ...
Alff, L. +8 more
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Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media [PDF]
ACS Applied Nano Materials, 2021 Producción Científica Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate.
Tauno Kahro +12 more
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Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals [PDF]
Advanced ScienceHafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based ...
Zhenhai Li +12 more
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Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes [PDF]
Nature CommunicationsHafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Xia Gan +7 more
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Flexoelectricity in amorphous hafnium oxide (HfO2)
APL MaterialsFlexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of ...
Daniel Moreno-Garcia +2 more
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Crystals, 2023 Surface scale is usually formed in the aerofoil part of as-cast nickel-based single crystal turbine blades by the strong interaction between the mould wall and the melt, and the subsequent oxidation of the fresh metallic surface of the casting.
KeeHyun Park, Paul Withey
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Advances of hafnium based nanomaterials for cancer theranostics
Frontiers in Chemistry, 2023 Hafnium-based nanomaterials (Hf-NMs) have attracted the interest of numerous biomedical researchers by their unique properties. Recent years have witnessed significant advancements in the field of Hafnium-based nanomaterials, particularly in the context ...
Jiayi Wang +6 more
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Determination of the vapour pressure curves and vaporization enthalpies of hafnium alkoxides using thermogravimetric analysis [PDF]
Royal Society Open Science, 2019 In order to identify a volatile metallo-organic precursor for the deposition of hafnium oxide (HfO2) films for atomic layer deposition (ALD) applications, the evaporative properties of hafnium alkoxides (hafnium isopropoxide, hafnium n-propoxide and ...
Changhong Wang +2 more
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