Results 11 to 20 of about 3,015,797 (333)

Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Electronic Materials
Biaxial stress is identified to play an important role in the polar orthorhombic phase stability in hafnium oxide‐based ferroelectric thin films. However, the stress state during various stages of wake‐up has not yet been quantified.
Samantha T. Jaszewski, Shelby S. Fields, Sebastian Calderon, Benjamin L. Aronson, Thomas E. Beechem, Kyle P. Kelley, Casey Zhang, Megan K. Lenox, Ian A. Brummel, Elizabeth C. Dickey, Jon F. Ihlefeld   +10 more
doaj   +2 more sources

Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films

APL Materials, 2021
The hafnium oxide material class is characterized by the coexistence of several polymorphs between which phase transitions are induced by means of composition and external electric fields. Pyroelectric materials, which convert heat into electrical energy,
Clemens Mart, Thomas Kämpfe, Kati Kühnel, Malte Czernohorsky, Sabine Kolodinski, Maciej Wiatr, Wenke Weinreich, Lukas M. Eng   +7 more
doaj   +2 more sources

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. [PDF]

Nano Converg, 2023
HfO_2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such ...
Lee J, Yang K, Kwon JY, Kim JE, Han DI, Lee DH, Yoon JH, Park MH.   +7 more
europepmc   +2 more sources

Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity. [PDF]

Sci Adv, 2023
A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices.
Hellenbrand M, Bakhit B, Dou H, Xiao M, Hill MO, Sun Z, Mehonic A, Chen A, Jia Q, Wang H, MacManus-Driscoll JL.   +10 more
europepmc   +2 more sources

Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide. [PDF]

ACS Appl Electron Mater, 2023
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access memory).
Kaiser N, Song YJ, Vogel T, Piros E, Kim T, Schreyer P, Petzold S, Valentí R, Alff L.   +8 more
europepmc   +2 more sources

Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020
Thermal atomic layer etching (ALE) can be achieved using sequential, self-limiting fluorination and ligand-exchange reactions. Previous studies have demonstrated thermal ALE of amorphous HfO2 and ZrO2 ALD films. This study explored the differences between thermal ALE of amorphous and polycrystalline films of hafnium oxide, zirconium oxide, and hafnium ...
Jessica A. Murdzek, Steven M. George
openaire   +2 more sources

NBTXR3 Radiotherapy-Activated Functionalized Hafnium Oxide Nanoparticles Show Efficient Antitumor Effects Across a Large Panel of Human Cancer Models. [PDF]

Int J Nanomedicine, 2021
Purpose The side effects of radiotherapy induced on healthy tissue limit its use. To overcome this issue and fully exploit the potential of radiotherapy to treat cancers, the first-in-class radioenhancer NBTXR3 (functionalized hafnium oxide nanoparticles)
Zhang P, Marill J, Darmon A, Mohamed Anesary N, Lu B, Paris S.   +5 more
europepmc   +2 more sources

Surface Plasmon Resonance Biosensor Chip for Human Blood Groups Identification Assisted with Silver-Chromium-Hafnium Oxide

Magnetochemistry, 2023
Chromium (Cr), silver (Ag) and hafnium oxide (HfO2) are used in a surface plasmon resonance (SPR)-based biosensor with an optimized design for measuring blood groups at a wavelength of 633 nm.
P. S. Pandey, S. Raghuwanshi, Rajesh K. Singh, Santosh Kumar   +3 more
semanticscholar   +1 more source

Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices

Advanced Electronic Materials, 2023
Memristive devices for neuromorphic computing have been attracting ever growing attention over the last couple of years. In neuromorphic electronics, memristive devices with multi‐level resistance states are required to accurately reproduce synaptic ...
R. Marquardt, F. Zahari, J. Carstensen, G. Popkirov, O. Gronenberg, G. Kolhatkar, H. Kohlstedt, M. Ziegler   +7 more
semanticscholar   +1 more source

Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films

Frontiers in Nanotechnology, 2022
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications.
Maximilian Lederer, Konrad Seidel, Ricardo Olivo, Thomas Kämpfe, Lukas M. Eng   +4 more
doaj   +1 more source