Results 21 to 30 of about 3,015,797 (333)
Applied Physics Letters, 2023 The mechanism of nanoscopic domain switching in ferroelectric hafnium oxide and its implications for antiferroelectric-like behavior as well as for the wake-up effect is still widely discussed.
M. Lederer +8 more
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A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
Physica Status Solidi (a), 2023 Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium‐doped, and the ...
A. Sünbül +13 more
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On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide
Physica Status Solidi (a), 2021 Ferroelectric hafnium oxide (HfO2) is considered a very prospective material for applications in integrated devices due to its considerably large spontaneous polarization and superior thickness scaling.
M. Lederer +8 more
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Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
Scientific Reports, 2021 Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature
Maximilian Lederer +6 more
doaj +1 more source
Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide [PDF]
Nature Communications, 2023 A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as
Kazuma Taki +8 more
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Applied Physics Letters, 2022 Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic applications owing to their superior thickness scaling of ferroelectric stability and compatibility with mainstream semiconductors and fabrication processes.
J. Ihlefeld +2 more
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Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
Crystals, 2022 Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber +5 more
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Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties.
ACS Applied Materials and Interfaces, 2021 Hafnium oxide plays an important role as a dielectric material in various thin-film electronic devices such as transistors and resistive or ferroelectric memory.
N. Kaiser +8 more
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Review of clinical applications of radiation-enhancing nanoparticles
Biotechnology Reports, 2020 Purpose: Clinical evidence of the radiation-enhancing effects of nanoparticles has emerged. Materials and methods: We searched the literature in English and French on PubMed up to October 2019.
N. Scher +6 more
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Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
IEEE Journal of the Electron Devices Society, 2022 In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen +5 more
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