Results 91 to 100 of about 25,253 (200)
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
Micromachines, 2019 A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu +7 more
doaj +1 more source
Amplifier for scanning tunneling microscopy at MHz frequencies
, 2018 Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously performing ...
Allan, M. P. +6 more
core +4 more sources
Design of Cryogenic SiGe Low-Noise Amplifiers [PDF]
, 2007 This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator.
Bardin, Joseph C. +2 more
core
, 2017 The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想) +9 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu +6 more
doaj +1 more source
Current Status and Perspectives of Cosmic Microwave Background Observations
, 2003 Measurements of the cosmic microwave background (CMB) radiation provide a unique opportunity for a direct study of the primordial cosmic plasma at redshift z ~1000.
Bersanelli, Marco +2 more
core +1 more source
Electronics Letters, 1985 A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance.
J. Berenz +3 more
openaire +1 more source
, 2013 We describe the high fidelity dispersive measurement of a superconducting qubit using a microwave amplifier based on the Superconducting Low-inductance Undulatory Galvanometer (SLUG).
Barends, R. +8 more
core +1 more source
Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
MicromachinesA comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper.
Zixin Zhen +4 more
doaj +1 more source
Amplification and squeezing of quantum noise with a tunable Josephson metamaterial
, 2008 It has recently become possible to encode the quantum state of superconducting qubits and the position of nanomechanical oscillators into the states of microwave fields.
Castellanos-Beltran, M. A. +4 more
core +1 more source