Results 161 to 170 of about 25,253 (200)
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Japanese Journal of Applied Physics, 1986
A short and narrow gate GaAs/AlGaAs MESFET with a HEMT structure was tested as a picosecond photodetector. Its impulse response was measured by the autocorrelation technique and found as fast as 22 ps in FWHM.
Tokuo Umeda +2 more
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A short and narrow gate GaAs/AlGaAs MESFET with a HEMT structure was tested as a picosecond photodetector. Its impulse response was measured by the autocorrelation technique and found as fast as 22 ps in FWHM.
Tokuo Umeda +2 more
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1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393), 2003
The High Electron Mobility Transistor (HEMT) device structure has played a significant role in analog and digital integrated circuit technology since the early 1980s. The development of the HEMT followed a typical path from fundamental studies of materials to device design and modeling.
D. Docter +6 more
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The High Electron Mobility Transistor (HEMT) device structure has played a significant role in analog and digital integrated circuit technology since the early 1980s. The development of the HEMT followed a typical path from fundamental studies of materials to device design and modeling.
D. Docter +6 more
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Large-signal HEMT modelling, specifically optimized for InP based HEMTs
Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 2002InP based HEMTs are the optimum choice for high-performant, low-noise microwave and especially millimetre wave MMICs. Regarding the stringent small-size requirement of future telecommunications systems, it is mandatory to extend the functionality to non-linear circuits.
D. Schreurs +7 more
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Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
J.A. del Alamo, J. Joh
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This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
J.A. del Alamo, J. Joh
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HEMT Carrier Mobility Analytical Model
Materials Science Forum, 2005In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered.
Lukić, Petar +2 more
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IEEE Transactions on Microwave Theory and Techniques, 1986
Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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Super-low-noise HEMT based on new HEMT noise model
1993 23rd European Microwave Conference, 1993Using a two-dimensional device simulation, we clarified why HEMT's have a superior low-noise performance. The new HEMT noise model, which considers the cooling effect on the electron temperature, indicates that higher sheet carrier density leads to lower noise power.
Kazukiyo Joshin +2 more
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Comparison of electrical characteristics of metamorphic HEMTs with InP HEMTs and PHEMTs
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and ...
Kenji Kawada +6 more
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UNSTRAINED InAlN/GaN HEMT STRUCTURE
International Journal of High Speed Electronics and Systems, 2004InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization.
M. Neuburger +11 more
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Hemt’s capability for millimeter wave applications
Annales Des Télécommunications, 2001Ce papier presente un etat actuel des performances de puissance et de bruit des transistors a effet de champ a gaz ďelectrons bidimensionnel (hemt). On donne au travers de quelques lois simples, la dependance des caracteristiques electriques de ces composants avec la structure de couche (materiaux employes, epaisseursi) et la geometric Enfin on compare
Bollaert, S. +5 more
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