Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Adv Sci (Weinh)Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F +15 more
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Ocular development after highly effective modulator treatment early in life
Frontiers in Pharmacology, 2023 Highly effective cystic fibrosis (CF) transmembrane conductance regulator (CFTR) modulator therapies (HEMT), including elexacaftor-tezacaftor-ivacaftor, correct the underlying molecular defect causing CF.
Yimin Zhu +5 more
doaj +1 more source
Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
doaj +1 more source
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
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The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
IEEE Journal of the Electron Devices Society, 2022 The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu +9 more
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Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application [PDF]
Serbian Journal of Electrical EngineeringThis paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application.
Ahmad Neda, Rewari Sonam, Nath Vandana
doaj +1 more source
Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
Micromachines, 2021 A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is ...
Rui-Rong Wang +4 more
doaj +1 more source
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
core +3 more sources
On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]
, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo +6 more
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Research on HEMT device parameter extraction method based on artificial neural network
Dianzi Jishu Yingyong, 2020 Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
doaj +1 more source