Results 21 to 30 of about 25,253 (200)
A SiGe HEMT Mixer IC with Low Conversion Loss [PDF]
, 2003 The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology.
Abele, P. +7 more
core +1 more source
Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
AIP Advances, 2020 In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin +9 more
doaj +1 more source
Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs [PDF]
Journal of Electrical and Computer Engineering Innovations, 2019 Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of ...
Z. Kordrostami, S. Hamedi, F. Khalifeh
doaj +1 more source
125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]
, 2019 To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran +7 more
core +2 more sources
Optimization of MKID Noise Performance Via Readout Technique for Astronomical Applications [PDF]
, 2010 Detectors employing superconducting microwave kinetic inductance detectors (MKIDs) can be read out by measuring changes in either the resonator frequency or dissipation. We will discuss the pros and cons of both methods, in particular, the readout method
Anastasios Vayonakisa +22 more
core +3 more sources
Robust Ku-Band GaN Low-Noise Amplifier MMIC [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules.
Seong-Hee Han, Dong-Wook Kim
doaj +1 more source
International Journal for Simulation and Multidisciplinary Design Optimization, 2022 The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid +2 more
doaj +1 more source
A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
core +1 more source
Oscillator Phase Noise and Small-Scale Channel Fading in Higher Frequency Bands [PDF]
, 2014 This paper investigates the effect of oscillator phase noise and channel variations due to fading on the performance of communication systems at frequency bands higher than 10GHz.
Eriksson, Thomas +3 more
core +2 more sources
Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov +3 more
doaj +1 more source