Results 31 to 40 of about 25,253 (200)
Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
doaj +1 more source
Hot electron modelling of HEMTs [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole +2 more
openaire +1 more source
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications [PDF]
, 2005 The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
Elgaid, K. +4 more
core +1 more source
Micromachines, 2023 In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip ...
Kuo-Bin Hong +7 more
doaj +1 more source
The Use of Cryogenic HEMT Amplifiers in Wide Band Radiometers [PDF]
, 2000 Advances in device fabrication, modelling and design techniques have made wide band, low noise cryogenic amplifiers available at frequencies up to 106 GHz. Microwave radiometry applications as used in radio astronomy capitalize on the low noise and large
Jarosik, Norman
core +1 more source
A cryogenic amplifier for fast real-time detection of single-electron tunneling
, 2007 We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz.
Nooitgedagt, T. +4 more
core +2 more sources
When self-consistency makes a difference [PDF]
, 2008 Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio +5 more
core +1 more source
Results in EngineeringTo enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In1-xGaxAs channel layer and double Si-doped structure (DPLC-HEMT) is proposed.
Shuxiang Sun +4 more
doaj +1 more source
Micromachines, 2022 The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq +4 more
doaj +1 more source
Gain Stabilization of a Submillimeter SIS Heterodyne Receiver
, 2007 We have designed a system to stabilize the gain of a submillimeter heterodyne receiver against thermal fluctuations of the mixing element. In the most sensitive heterodyne receivers, the mixer is usually cooled to 4 K using a closed-cycle cryocooler ...
Battat, James +5 more
core +1 more source