Results 41 to 50 of about 25,253 (200)

50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]

, 2006
Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, K., McLelland, H., Moran, D.A.J., Stanley, C.R., Thayne, I., Whyte, G.   +5 more
core   +1 more source

Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection

East European Journal of Physics
In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors.
Abdellah Bouguenna, Abdelhadi Feddag, Driss Bouguenna, Ibrahim Farouk Bouguenna   +3 more
doaj   +1 more source

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
doaj   +1 more source

Strongly quadrature-dependent noise in superconducting micro-resonators measured at the vacuum-noise limit

, 2010
We measure frequency- and dissipation-quadrature noise in superconducting lithographed microwave resonators with sensitivity near the vacuum noise level using a Josephson parametric amplifier.
Castellanos-Beltran, M. A., Gao, J., Hilton, G. C., Irwin, K. D., Leduc, H. G., Lehnert, K. W., Mallet, F., Mates, J. A. B., Schmidt, D. R., Vale, L. R., Zmuidzinas, J.   +10 more
core   +1 more source

High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication [PDF]

, 2001
An excellent noise figure and high linearity, K-band p-HEMT LNA MMIC, that incorporates single-bias configuration and negative feedback circuit, has be en developed for LMDS (Local Multi-point Distribution Service) and satellite communication.
Fukaya, J., Hasegawa, Y., Hirata, M., Mimino, Y.   +3 more
core   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

High intensity study of THz detectors based on field effect transistors

, 2014
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and ...
But, Dmytro B., Drachenko, Oleksiy, Drexler, Christoph, Dyakonova, Nina, Ganichev, Sergey D., Gutin, Alexey, Knap, Wojciech, Sakhno, Mykola V., Sizov, Fiodor F.   +8 more
core   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]

, 2011
We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D., Coutu, Ronald A., Jr., Heller, Eric R., Poling, Brian S., Shealy, Jeffrey B., Vetury, Ramakrishna, Via, Glen D.   +6 more
core   +2 more sources