Results 51 to 60 of about 25,253 (200)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies, 2021
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar   +5 more
doaj   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]

, 2017
Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo, Ryo Ishikawa, Tsukasa Yasui   +2 more
core   +2 more sources

Assessing Dietary Patterns and Composition Among Adults With Cystic Fibrosis Taking Highly Effective Modulator Therapy

Pediatric Pulmonology, Volume 61, Issue 3, March 2026.
ABSTRACT Background The metabolic impact of poor diet quality in cystic fibrosis (CF), coupled with a rise in obesity and modulator‐induced weight gain, is a growing concern. Our study aimed to understand knowledge and perspectives regarding dietary changes on modulators, and how measured nutrient intake changes with different dietary patterns in ...
Julianna Bailey, Natalie R. Rose, Ashritha R. Chalamalla, Justin D. Anderson, Elizabeth Baker, Jennifer S. Guimbellot   +5 more
wiley   +1 more source

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks [PDF]

, 2017
In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm.
Cho, Sung-Jin, Floros, Konstantinos, Guiney, Ivor, Hemakumara, Dilini, Humphreys, Colin J., Li, Xu, Moran, David A.J., Thayne, Iain G., Wallis, David J., Wasige, Edward   +9 more
core   +1 more source

Tunable Josephson Generator for Qubit Excitation and Two‐Tone Spectroscopy

Advanced Quantum Technologies, Volume 9, Issue 3, March 2026.
A tunable on‐chip Josephson generator that enables direct qubit excitation has been presented. The device consists of a current‐biased Josephson junction and a superconducting resonator, forming a microwave source that operates at 4 K. Excitation of the qubit at 20 mK was done via a short coaxial line between the 4 K and 20 mK stages.
M. M. Khrenov, R. D. Yusupov, G. I. Gubochkin, V. A. Vozhakov, I. A. Nazhestkin, A. D. Belanovsky, A. S. Ionin, P. A. Gladilovich, G. S. Khismatullin, L. V. Filippenko, M. Y. Fominskii, V. P. Koshelets, M. Yu. Kupriyanov, V. V. Ryazanov, N. Maleeva, N. V. Klenov, I. I. Soloviev, D. S. Yakovlev   +17 more
wiley   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source

MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH

Российский технологический журнал, 2016
The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are ...
D. V. Krapukhin, P. P. Maltsev
doaj   +1 more source