Results 61 to 70 of about 25,253 (200)
5 Watt GaN HEMT Power Amplifier for LTE [PDF]
, 2014 This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier.
Collado, A. +3 more
core
Neural-Based Nonlinear Device Models for Intermodulation Analysis [PDF]
, 2003 A new procedure to learn a nonlinear model together with its derivative parameters using a composite neural network is presented.So far neural networks have never been used to extract large-signal device model accounting for distortion parameters ...
Colantonio, P. +4 more
core +1 more source
Advanced Science, Volume 13, Issue 7, 3 February 2026.This work presents highly consistent GaN‐based thin‐film gas sensors prepared by MOCVD for non‐invasive breath analysis. The sensors exhibit tunable selectivity from oxidizing to reducing gases by incorporating In composition, ultra‐low detection limits and humidity resistance.
Yuxuan Wang +9 more
wiley +1 more source
Zhongguo Jianchuan YanjiuObjectiveThis paper discusses the damage characteristics of gallium nitride (GaN)-based low-noise amplifiers (LNA) under high power microwave (HPM) pulses.
Min LIU +6 more
doaj +1 more source
High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment
Advances in Condensed Matter Physics, 2015 A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.
Chao Yang +5 more
doaj +1 more source
Planck Spectroscopy and the Quantum Noise of Microwave Beam Splitters
, 2010 We use a correlation function analysis of the field quadratures to characterize both the black body radiation emitted by a 50 Ohm load resistor and the quantum properties of two types of beam splitters in the microwave regime. To this end, we first study
Baust, A. +9 more
core +1 more source
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
core +1 more source
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review
Energies, 2022 Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems.
Enrico Bottaro +2 more
doaj +1 more source
Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger +8 more
wiley +1 more source