Results 71 to 80 of about 25,253 (200)

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co‐workers demonstrate single‐crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]

Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
doaj  

Extracellular Particles Derived From Mesenchymal Stromal Cells Reduce Pseudomonas aeruginosa Lung Infection and Inflammation in Mice

Journal of Extracellular Biology, Volume 5, Issue 2, February 2026.
ABSTRACT The World Health Organization and the U.S. Centre for Disease Control and Prevention have reported that antibiotic‐resistant infections with Pseudomonas aeruginosa present a significant health risk worldwide. In the genetic disease Cystic Fibrosis (CF), chronic antibiotic‐resistant Pseudomonas lung infections and persistent inflammation remain
Sharanya Sarkar, Roxanna Barnaby, Zachary Faber, Lily Taub, Carolyn Roche, Lily A. Charpentier, Thomas H. Hampton, Brad Vietje, Douglas J. Taatjes, Byoung‐Kyu Cho, Young Ah Goo, Matthew J. Wargo, Daniel J. Weiss, Tracey L. Bonfield, Thomas J. Kelley, Bruce A. Stanton   +15 more
wiley   +1 more source

GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]

, 2016
This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla, Elgaid, Khaled, Guiney, Ivor, Li, Xu, Wallis, David J.   +4 more
core  

Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier [PDF]

, 2001
We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed ...
Beyer, A., De Raedt, W., Nauwelaers, B., Neuhaus, B., Schreurs, D., Vandersmissen, R.   +5 more
core   +1 more source

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies [PDF]

, 2004
In this paper, we review a range of nanofabrication techniques which enable the realization of uniform, high yield, high performance 50 nm T-gate III-V high electron mobility transistors (HEMTs). These technologies have been applied in the fabrication of
Boyd, E., Cao, X., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Stanley, C., Thayne, I., Thoms, S.   +8 more
core   +1 more source

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

Rare Metals, Volume 45, Issue 2, February 2026.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang, Xiao‐Yue Liu, Te Xu, Jiang‐Wen Wang, Yuan‐Hong Shi, Shi‐Dai Tian, Xiang Zhang, Wei‐Guo Hu, Jun‐Yi Zhai   +8 more
wiley   +1 more source