Results 81 to 90 of about 25,253 (200)

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

Electrical spin injection and detection in an InAs quantum well

, 2006
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers.
Donghwa Jung, D’yakonov M. I., D’yakonov M. I., D’yakonov M. I., D’yakonov M. I., Hyun Cheol Koo, Hyunjung Yi, Jae-Beom Ko, Jonghwa Eom, Joonyeon Chang, Seon-Gu Huh, Suk-Hee Han   +11 more
core   +1 more source

Polarity‐Controlled Volatile HfO2 Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing

Advanced Science, Volume 13, Issue 3, 14 January 2026.
This study demonstrates a TiN/HfO2/ITO memristor exhibiting field‐induced bimodal volatile switching behavior originating from ion bombardment during sputtering. The dipole‐driven, polarity‐dependent states produce multilevel output responses that expand the reservoir's output dimensionality and enhance encoding diversity.
Yuseong Jang, Chanmin Hwang, Myoungsu Chae, Taegi Kim, Hee‐Dong Kim   +4 more
wiley   +1 more source

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj   +1 more source

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Micro and Nano Engineering, 2020
In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV ...
Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang   +7 more
doaj   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

The validated French CFAbd‐Score reveals a lower burden of gastrointestinal symptoms in patients on Elexacaftor/Tezacaftor/Ivacaftor

Journal of Pediatric Gastroenterology and Nutrition, Volume 82, Issue 1, Page 24-32, January 2026.
Abstract Objectives Multiorgan abdominal involvement is a hallmark of Cystic fibrosis (CF). The CFAbd‐Score© is the first CF‐specific gastrointestinal patient reported outcome‐measure (PROM) developed following FDA‐guidelines. The PROM has proved to sensitively differentiate people with CF (pwCF) from healthy controls (HC).
Isabelle Sermet‐Gaudelus, Pauline Sadrieh, Anne Sophie Bonnel, Raphael Enaud, Nathalie Wizla, Jeanne Languepin, Ambre Nangui, Audrey Deelawon, Johanna Rave, Samira Dabelow, Anton Barucha, Carlos Zagoya, Franziska Duckstein, Jochen Georg Mainz   +13 more
wiley   +1 more source

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
doaj   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors

Научно-технический вестник информационных технологий, механики и оптики
The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers.
A. Farti, A. Touhami
doaj   +1 more source