Results 221 to 230 of about 48,911 (290)

Molecular Design and Interfacial Functions of Self‐Assembled Monolayers for Perovskite and Tandem Solar Cells

Advanced Energy Materials, EarlyView.
We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley   +1 more source

Contact engineering of metallic Ni-integrated niobium sulfide via H₂S treatment for enhanced MoS₂ transistor performance and CMOS compatibility. [PDF]

Sci Rep
Hori K, Chang WH, Irisawa T, Ogura A, Okada N.   +4 more
europepmc   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

Advanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz, Gisya Abdi, Andrzej Sławek, Marlena Gryl, Konrad Szaciłowski   +4 more
wiley   +1 more source

Large Unsaturated Magnetoresistance in Gated MoS₂ Flakes. [PDF]

Small
Hamdi A, Dettmann D, Botello-Méndez AR, Pezeshki A, Skokan L, Ruediger A, Fiori G, Zanolli Z, Orgiu E.   +8 more
europepmc   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping. [PDF]

ACS Nano
Nagarajan S, König D, Ratschinski I, Galderisi G, Shams S, Mikolajick T, Hiller D, Trommer J.   +7 more
europepmc   +1 more source

Remarkably High Effective Mobility of 301 cm²/V·s in 3 nm Ultra-Thin-Body SnO₂ Transistor by UV Annealing. [PDF]

Nanomaterials (Basel)
Shih AC, Zhan YH, Chin A.
europepmc   +1 more source

A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. [PDF]

Micromachines (Basel)
Wang C, Liao X, Gong M, Xiao F, Guan H, Zhang F, Zhou D.   +6 more
europepmc   +1 more source

Origin of Threshold Voltage Instabilities in Indium Oxide Transistors. [PDF]

ACS Appl Mater Interfaces
Lin TJ, Chen SC, Lee YT, Cheng SL, Tseng R, Wang ST, Chang YC, Pan YY, Chang CY, Chou TT, Lin CH, Ku CS, Lin CL, Liu PT, Kim H, Lien DH.   +15 more
europepmc   +1 more source