Results 241 to 250 of about 48,911 (290)

Pseudomorphic InGaAs high electron mobility transistors

Thin Solid Films, 1993
Abstract High electron mobility transistors (HEMTs) with single-quantum-well active layers composed of pseudomorphic InGaAs on GaAs and InP substrates have yielded substantial performance enhancements relative to their lattice-matched equivalents. The higher cut-off frequencies possessed by these devices have enabled new applications to be realized ...
J.M. Ballingall, P.A. Martin, J. Mazurowski, P. Ho, P.C. Chao, P.M. Smith, K.H.G. Duh   +6 more
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Kinetic Transport in Scaled High Electron Mobility Transistors

Physica Scripta, 2004
Summary: Quantum discrete kinetic model and diffuse-reflection type boundary conditions are adopted to solve the (ballistic) transport problem of many fermions within a confined slender microdomain. Our preliminary results for gate lengths of 90, 70, and 50 nm resemble those reported by Kalna and Asenov [Semiconductort Sci. Technol. 17, 597 (2002)].
A Kwang-Hua Chu, A Kwang-Hua Chu
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High Electron Mobility InAs Nanowire Field‐Effect Transistors

Small, 2007
AbstractSingle‐crystal InAs nanowires (NWs) are synthesized using metal–organic chemical vapor deposition (MOCVD) and fabricated into NW field‐effect transistors (NWFETs) on a SiO2/n+‐Si substrate with a global n+‐Si back‐gate and sputtered SiOx/Au underlap top‐gate.
Shadi A, Dayeh, David P R, Aplin, Xiaotian, Zhou, Paul K L, Yu, Edward T, Yu, Deli, Wang   +5 more
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Indirect photoreflectance from high-electron-mobility transistor structures

Physical Review B, 1992
Photoreflectance in sample regions shaded from laser pump illumination reveals a low-level signal attributable to modulation of the two-dimensional electron gas in GaAs/Al x Ga 1−x As high-electron-mobility transistor structures. Samples with 2-9×10 5 -cm 2 /Vs electron mobility (at 4 K) display photoreflectance ΔR/R∼5×10 −6 at distances up to 3 mm ...
, Sydor, , Engholm, , Manasreh, , Evans, , Stutz, , Mitchel   +5 more
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Organic High Electron Mobility Transistors Realized by 2D Electron Gas

Advanced Materials, 2017
A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over ...
Panlong Zhang, Haibo Wang, Donghang Yan
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High-power monolithic AlGaN/GaN high electron mobility transistor switches

International Journal of Microwave and Wireless Technologies, 2009
This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%.
Alleva, V, Bettidi, A, CICCOGNANI, WALTER, De Dominicis, M, Ferrari, M, Lanzieri, C, LIMITI, ERNESTO, Peroni, M.   +7 more
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Nonlinear model of high electron mobility transistor

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003., 2003
A new nonlinear HEMT model is presented. The model is based on a well-known small-signal model and includes a nonlinear description of some typically nonlinear components. A parameter extraction algorithm based on processing S-parameter and noise figure data measurements has been developed.
P.A. Yemtsev, I.K. Sunduchkov, B.N. Shelkovnikov, K.S. Sunduchkov   +3 more
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High electron mobility transistors

1991
The High Electron Mobility Transistor (HEMT) has achieved its predicted performance goals, operating at high frequencies (>60 GHz) and high speeds (>10 Gbit/s). As a consequence, it is becoming the transistor of choice for millimetre wave and high speed applications; stimulating the development of new monolithic integrated electronic and optoelectronic
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SiC-based high electron mobility transistor

Applied Physics Letters
This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics.
Hiroyuki Sazawa, Akira Nakajima, Shigeyuki Kuboya, Hitoshi Umezawa, Tomohisa Kato, Yasunori Tanaka   +5 more
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Development of High Electron Mobility Transistor

Japanese Journal of Applied Physics, 2005
The development of the high electron mobility transistor (HEMT) provides a good illustration of the way a new device emerges and evolves toward commercialization. This article will focus on these events that the author feels might be of interest to young researchers. Recent progress and future trends in HEMT technology are also described.
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