Results 241 to 250 of about 12,413 (305)

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]

Commun Eng
Chung SW, Yoon SH, Jeong JK.
europepmc   +1 more source

Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor. [PDF]

Sci Rep
Aghajani A, Karsenty A.
europepmc   +1 more source

Recent Advances in Graphene-Based Field-Effect Transistor Biosensors for Disease Biomarker Detection and Clinical Prospects. [PDF]

Biosensors (Basel)
Nagpal D, Singh A, Link J, Mehta AS, Kumar A, Budhraja V.   +5 more
europepmc   +1 more source

Roll-to-Roll Gravure-Printed SWCNT Ring Oscillator for Flexible Microfluidic Ion Sensing. [PDF]

Nanomaterials (Basel)
Sun J, Park H, Park J, Shrestha S, Parajuli S, Jung Y.   +5 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

GaN electronics with high electron mobility transistors

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004
The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics, GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of ...
I. Adesida, V. Kumar, J.-W. Lee, A. Kuliev, R. Schwindt, W. Lanford   +5 more
openaire   +1 more source

High electron mobility transistor as electronic flute

Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics, 2002
We discuss the similarity between the plasma waves in two dimensional systems and sound waves. We show that the behavior of both types of waves is governed by the same equations. Therefore, we may create resonant structures for plasma waves, similar to those in musical instruments, and plasma waves can be excited by a DC current, just like wind musical
M.I. Dyakonov, M.S. Shur
openaire   +1 more source

High Electron Mobility Transistor Logic

Japanese Journal of Applied Physics, 1981
A high electron mobility transistor (HEMT) logic is described. Ring oscillators with enhancement-mode switching and depletion-mode load HEMTs with a 1.7 µm-gate length have been fabricated to assess logic performance capability. Switching delays down to 56.5 ps at room temperature and down to 17.1 ps at liquid nitrogen temperature have been obtained.
Takashi Mimura, Kazukiyo Joshin, Satoshi Hiyamizu, Kohki Hikosaka, Masayuki Abe   +4 more
openaire   +1 more source

High Electron Mobility Transistors

2004
High Electron Mobility Transistors(HEMTs) [340] are an advanced modification of the simple bulk FET, such as the MEtal Semiconductors Field Effect Transistor (MESFET). Typically, a semiconductor material (barrier) with a comparably wider bandgap is grown on top of a semiconductor material with a higher mobility and comparably lower bandgap.
Vassil Palankovski, Rüdiger Quay
openaire   +1 more source

The growth of high electron mobility InAsSb for application to high electron-mobility transistors

Journal of Crystal Growth, 2009
Abstract High electron mobility and low defect density InAsSb lattice matched to AlSb has been successfully grown on InP substrates by the gas-source molecular beam epitaxy using an AlAsSb/AlSb composite buffer layer structure. The common antimony anion of AlAsSb, AlSb, and InAsSb is believed to effectively improve the film quality of InAsSb and AlSb
Chichih Liao, K.Y. Cheng
openaire   +1 more source

High electron mobility transistors

Surface Science, 1986
Abstract Recent developments in selectively doped III–V compound heterostructures for 2DEG systems and high electron mobility transistors (HEMTs) are described.
openaire   +1 more source