Results 261 to 270 of about 48,911 (290)

Terahertz electrodynamics in high electron-mobility transistors

Journal of Applied Physics, 2013
Plasmon current, charge oscillations, and associated electromagnetic fields in the THz range of a two-dimensional electron gas forming the channel of a high electron mobility transistor have been analysed by solving the full set of Euler, continuity, and Maxwell equations.
openaire   +2 more sources

Radiation effects in high-electron-mobility transistors

Technical Physics Letters, 1999
The influence of 60Co γ radiation on the current-voltage characteristics of high electron mobility transistors is examined in the dose range from 1×104 to 6×108 R. No changes are observed up to a total dose of 1×107 R, but radiation-induced degradation of the transistors occurs when the dose exceeds 1× 108 R. The possible causes of the effects observed
openaire   +1 more source

AlGaN/GaN High Electron Mobility Transistors

2022
R. Gaska, M.S. Shur, A. Khan
openaire   +1 more source

High Electron Mobility Transistors

2002
Prashant Chavarkar, Umesh Mishra
openaire   +1 more source

High-electron-mobility transistors

2020
openaire   +1 more source

High Electron Mobility Transistors (HEMTs)

2007
Prashant Chavarkar, Umesh Mishra
openaire   +1 more source

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

IEEE Electron Device Letters, 2015
Kevin Leong, Stephen Sarkozy
exaly  

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

ACS Nano, 2013
Hochan Lee, Seongdong Lim, Hyun Cheol Koo   +2 more
exaly  

High Electron Mobility Transistor (HEMT)

2005
openaire   +1 more source

Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

Applied Physics Letters, 2016
Nathaniel Bishop
exaly