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High electron mobility transistors
Bulletin of Materials Science, 1990In this article, I briefly review the physics of the high electron mobility transistor (HEMT), the technological steps involved in the fabrication of the device, the current status, the remaining problems, and some areas of active research in which new developments might be expected in the future.
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A high-mobility electron-transporting polymer for printed transistors
Nature, 2009Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key ...
Yan, H. +7 more
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Kinetic Transport in Scaled High Electron Mobility Transistors
Physica Scripta, 2004Summary: Quantum discrete kinetic model and diffuse-reflection type boundary conditions are adopted to solve the (ballistic) transport problem of many fermions within a confined slender microdomain. Our preliminary results for gate lengths of 90, 70, and 50 nm resemble those reported by Kalna and Asenov [Semiconductort Sci. Technol. 17, 597 (2002)].
A Kwang-Hua Chu, A Kwang-Hua Chu
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Inp Based Inverted High Electron Mobility Transistors
[1991] 49th Annual Device Research Conference Digest, 1991Summary form only given. The fabrication and characterisation of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain cutoff frequency, and power gain cutoff frequency ...
A.E. Schmitz +3 more
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Simulation and analysis of metamorphic high electron mobility transistors
Microelectronics Journal, 2007In this paper, the metamorphic high electron mobility transistors (mHEMTs) are investigated numerically and compared with pseudo-morphic high electron mobility transistors (pHEMTs). The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations.
Jia-Chuan Lin, Po-Yu Yang, Wei-Chih Tsai
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A high frequency model for high electron mobility transistors
Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials, 2002In this paper, we present a high frequency model for the high electron mobility transistor. The model includes the distributed effects in the channel of the device through two newly developed wave equations in the linear and the saturation regimes. The equations are solved taking into account the electric fields along and perpendicular to the flow of ...
V. Kasemsuwan, H. Ahn, M. El Nokali
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Organic High Electron Mobility Transistors Realized by 2D Electron Gas
Advanced Materials, 2017A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over ...
Panlong Zhang, Haibo Wang, Donghang Yan
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Development of High Electron Mobility Transistor
Japanese Journal of Applied Physics, 2005The development of the high electron mobility transistor (HEMT) provides a good illustration of the way a new device emerges and evolves toward commercialization. This article will focus on these events that the author feels might be of interest to young researchers. Recent progress and future trends in HEMT technology are also described.
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Nonlinear model of high electron mobility transistor
13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003., 2003A new nonlinear HEMT model is presented. The model is based on a well-known small-signal model and includes a nonlinear description of some typically nonlinear components. A parameter extraction algorithm based on processing S-parameter and noise figure data measurements has been developed.
P.A. Yemtsev +3 more
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High electron mobility transistors
1991The High Electron Mobility Transistor (HEMT) has achieved its predicted performance goals, operating at high frequencies (>60 GHz) and high speeds (>10 Gbit/s). As a consequence, it is becoming the transistor of choice for millimetre wave and high speed applications; stimulating the development of new monolithic integrated electronic and optoelectronic
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