Results 251 to 260 of about 48,911 (290)

Proposed size-effect high-electron-mobility transistor

Solid-State Electronics, 1986
Abstract We present a theoretical analysis of a high-electron-mobility transistor that uses the quantum size-effect to increase the energy gap of a thin InSb film that forms the channel of the device. The analysis is based on a considerable amount of available data.
Phillipp G. Kornreich, Lois Walsh, James Flattery, Saliman Isa   +3 more
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High electron mobility transistor small signal model

2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004
The small signal model of the ATF-36077 high electron mobility transistor is presented for both packaged and unpackaged cases. The model parameter extraction procedure is presented. It is shown that using the transistor without its package gives the possibility to expand the amplifier frequency range more than twice.
P.A. Yemtsev, I.K. Sunduchkov, K.S. Sunduchkov, B.N. Shelkovnikov   +3 more
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Optoelectronic pseudomorphic high-electron-mobility transistors

SPIE Proceedings, 1997
We present experimental and theoretical results on in-situ photoconduction (PC) and photoemission (PE) studies on fully fabricated pseudomorphic high electron mobility transistors (PHEMTs). The measurements are performed on wafer and are non-destructive.
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Scaling properties of high electron mobility transistors

IEEE Transactions on Electron Devices, 1986
We present the scaling properties of an idealized HEMT structure at 300 K. A two-dimensional device model based on three moments of the Boltzmann equation is used to investigate a constant voltage scaling scheme. Detailed results are presented for gate lengths of 2.0, 1.33, 1.0, 0.67, and 0.50 µm.
I.C. Kizilyalli, K. Hess, J.L. Larson, D.J. Widiger   +3 more
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Thermal noise in high electron mobility transistors

Solid-State Electronics, 1983
Abstract Thermal noise in HEMT devices is evaluated for arbitrary drain voltages including saturation. The results closely resemble those for MOSFETS. The consequences of hot electron effects are indicated, and the effects due to feedback via the series resistance Rs on the source side of the channel are evaluated.
A. van der Ziel, E.N. Wu
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GaN-Based High Electron Mobility Transistor

A next-generation of highly efficient power devices is under development, utilizing wide bandgap semiconductors, such as GaN and SiC. These materials are gaining traction as attractive alternatives to silicon due to their superior properties. GaN, in particular, has garnered significant interest due to its excellent characteristics, such as a high ...
Nipun Sharma, Ashish Raman, Ravi Ranjan
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Simulation of high electron mobility transistors

2010
In der vorliegenden Dissertation werden die in HEMTs verwendeten III-V Halbleiter diskutiert. Eigene Monte Carlo-Simulationen werden durch eine umfassende Studie von vorhandenen experimentellen und theoretischen Werken erg¨anzt. Unter Berucksichtigung neuester Forschungsergebnisse uber die Bandstruktur der Materialien und aller wichtigen Streuungs ...
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Submillimiter measurement of high electron mobility transistors

1987 Twelth International Conference on Infrared and Millimeter Waves, 1987
Cyclotron Resonance measurements are used to determine the effective masses for High Electron Mobility Transistors. The effective mass is a function of gate voltage.
Chian-Sern Chang, Harold R. Fetterman, Arold Green   +2 more
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High electron mobility transistors for LSI circuits

1983 International Electron Devices Meeting, 1983
Current work on HEMT (High Electron Mobility Transistor) LSI technology is presented. Controllability in device parameters of the HEMT is crucially important, and is discussed in the context of LSI capability. Simple device modeling of HEMTs, taking into account the velocity saturation effects, is carried out to provide reasonably accurate predictions ...
T. Mimura, K. Nishiuchi, M. Abe, A. Shibatomi, M. Kobayashi   +4 more
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Ballistic transport in high electron mobility transistors

IEEE Transactions on Electron Devices, 2003
A general ballistic FET model that was previously used for ballistic MOSFETs is applied to ballistic high electron mobility transistors (HEMTs), and the results are compared with experimental data for a sub-50 nm InAlAs-InGaAs HEMT. The results show that nanoscale HEMTs can be modeled as an intrinsic ballistic transistor with extrinsic source/drain ...
null Jing Wang, M. Lundstrom
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