Results 271 to 280 of about 12,413 (305)

GaN-Based High Electron Mobility Transistor

A next-generation of highly efficient power devices is under development, utilizing wide bandgap semiconductors, such as GaN and SiC. These materials are gaining traction as attractive alternatives to silicon due to their superior properties. GaN, in particular, has garnered significant interest due to its excellent characteristics, such as a high ...
Nipun Sharma, Ashish Raman, Ravi Ranjan
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Radiation effects in high-electron-mobility transistors

Technical Physics Letters, 1999
The influence of 60Co γ radiation on the current-voltage characteristics of high electron mobility transistors is examined in the dose range from 1×104 to 6×108 R. No changes are observed up to a total dose of 1×107 R, but radiation-induced degradation of the transistors occurs when the dose exceeds 1× 108 R. The possible causes of the effects observed
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A Comprehensive Study on High Electron Mobility Transistors

High electron mobility transistors (HEMTs) and III-V compound materials are the key research and development fields for developing improved high-power solid-state devices and integrated circuits (ICs). GaN-based HEMTs have recently gained popularity owing to their usage in high-power and high-frequency applications.
G. Purnachandra Rao, Tanjim Rahman, E Raghuveera, Trupti Ranjan Lenka   +3 more
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Analysis and simulation of high electron mobility transistors

2001
HIGH Electron Mobility Transistors (HEMTs) are among the fastest three terminal devices existing. They find their application in communication, sensing, and radar, when high output power, high gain, and low noise properties are required. This work describes the development and application of simulation software, namely the two-dimensional device ...
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Terahertz electrodynamics in high electron-mobility transistors

Journal of Applied Physics, 2013
Plasmon current, charge oscillations, and associated electromagnetic fields in the THz range of a two-dimensional electron gas forming the channel of a high electron mobility transistor have been analysed by solving the full set of Euler, continuity, and Maxwell equations.
openaire   +2 more sources

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

International Journal of RF and Microwave Computer-Aided Engineering, 2022
Lili Zhai, Shaowei Wang, Jincan Zhang
exaly  

High-electron-mobility transistors

2020
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High Electron Mobility Transistors

2002
Prashant Chavarkar, Umesh Mishra
openaire   +1 more source

Analytical Modeling of High Electron Mobility Transistors

2019
In this chapter, an analytical model for single gate AlInSb/InSb HEMT device has been developed. A 2D sub threshold analysis of the proposed device is done to evaluate the channel potential, electric field, sub threshold drain current which exhibits superior performance with AlInSb/InSb in terms of short channel effects and electron mobility in the ...
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High Electron Mobility Transistors (HEMTs)

2007
Prashant Chavarkar, Umesh Mishra
openaire   +1 more source