Results 231 to 240 of about 48,911 (290)

High-Performance Air-Stable Polymer Monolayer Transistors for Monolithic 3D CMOS logics. [PDF]

Adv Mater
Cheng M, Zhang Y, Wang J, Wang H, Xie Y, Zhang S, Liu C, Chu J, Zhang F, Yang Z, Zheng Z, Wu M, Li L, Li M.   +13 more
europepmc   +1 more source

Synergistic Effects of Additive Engineering in Enhancing the Performance of Sn-Pb Perovskite Thin-Film Transistors and Derived Logic Circuits. [PDF]

Adv Sci (Weinh)
Ansari ZA, Kumar A, Banerjee S, Hanmandlu C, Thakran A, Chen YT, Yang PY, Li S, Pao CW, Chang YC, Chueh CC, Chu CW.   +11 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

High Electron Mobility Transistor Logic

Japanese Journal of Applied Physics, 1981
A high electron mobility transistor (HEMT) logic is described. Ring oscillators with enhancement-mode switching and depletion-mode load HEMTs with a 1.7 µm-gate length have been fabricated to assess logic performance capability. Switching delays down to 56.5 ps at room temperature and down to 17.1 ps at liquid nitrogen temperature have been obtained.
Takashi Mimura, Kazukiyo Joshin, Satoshi Hiyamizu, Kohki Hikosaka, Masayuki Abe   +4 more
openaire   +1 more source

Inp Based Inverted High Electron Mobility Transistors

[1991] 49th Annual Device Research Conference Digest, 1991
Summary form only given. The fabrication and characterisation of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain cutoff frequency, and power gain cutoff frequency ...
A.E. Schmitz, L.D. Nguyen, A.S. Brown, R.A. Metzger   +3 more
openaire   +1 more source

High electron mobility transistor as electronic flute

Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics, 2002
We discuss the similarity between the plasma waves in two dimensional systems and sound waves. We show that the behavior of both types of waves is governed by the same equations. Therefore, we may create resonant structures for plasma waves, similar to those in musical instruments, and plasma waves can be excited by a DC current, just like wind musical
M.I. Dyakonov, M.S. Shur
openaire   +1 more source

GaN electronics with high electron mobility transistors

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004
The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics, GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of ...
I. Adesida, V. Kumar, J.-W. Lee, A. Kuliev, R. Schwindt, W. Lanford   +5 more
openaire   +1 more source

High Electron Mobility Transistors

2004
High Electron Mobility Transistors(HEMTs) [340] are an advanced modification of the simple bulk FET, such as the MEtal Semiconductors Field Effect Transistor (MESFET). Typically, a semiconductor material (barrier) with a comparably wider bandgap is grown on top of a semiconductor material with a higher mobility and comparably lower bandgap.
Vassil Palankovski, Rüdiger Quay
openaire   +1 more source

Low Noise High Electron Mobility Transistors

Microwave and Millimeter-Wave Monolithic Circuits, 1984
Sub-half-micron gate length High Electron Mobility Transistors (HEMT) were fabricated by direct-write electron beam lithography for low noise EHF amplifiers. Modulation-doped epitaxial structures were grown by molecular beam epitaxy having 8,000 cm/sup 2// V-sec room temperature and 77,600 cm /sup2// V-sec liquid nitrogen Hall mobility for 10/sup12 ...
J.J. Berenz, K. Nakano, K.P. Weller
openaire   +1 more source

High electron mobility transistors

Surface Science, 1986
Abstract Recent developments in selectively doped III–V compound heterostructures for 2DEG systems and high electron mobility transistors (HEMTs) are described.
openaire   +1 more source

High electron mobility transistors

Bulletin of Materials Science, 1990
In this article, I briefly review the physics of the high electron mobility transistor (HEMT), the technological steps involved in the fabrication of the device, the current status, the remaining problems, and some areas of active research in which new developments might be expected in the future.
openaire   +1 more source