Results 131 to 140 of about 779 (192)

Latching in lateral insulated gate bipolar transistors

1987 International Electron Devices Meeting, 1987
The maximum gate controllable current of several different lateral insulated gate bipolar transistor (LIGBT) structures have been investigated. It is shown that the turn-on gate resistance affects the latching current of LIGBT's because of the faster turn-on of the lateral current component than the vertical current component. Addition of p+ sinker, n+
T.P. Chow, D.N. Pattanayak, B.J. Baliga, M.S. Adler   +3 more
openaire   +1 more source

Adjustable high-speed insulated gate bipolar transistor

IEEE Transactions on Plasma Science, 2006
A new adjustable insulated gate bipolar transistor (IGBT) with Si/SiGe heterojunction collector structures is proposed to improve the operation speed and decrease the turnoff power loss by suppressing the tail-current. SiGe collector provides low contact resistance without consequently sacrificing turnoff losses, and also acts to suppress hole ...
null Fei Zhang, null Lina Shi, null Chengfang Li, null Liang Zhang, null Wei Wang, null Wen Yu, null Xiaowei Sun   +6 more
openaire   +1 more source

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source

Insulated Gate Bipolar Transistors

1998
In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures.
Ranbir Singh, B. Jayant Baliga
openaire   +1 more source

A modular gate drive circuit for insulated gate bipolar transistors

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 2002
A novel gate drive circuit for insulated gate bipolar transistors (IGBTs) is presented which provides high-speed switching with attention to dV/dt requirements. It also provides pulse-by-pulse overcurrent protection through on-state voltage monitoring while sending out a fault signal to the control circuit.
S.K. Biswas, B. Basak, K.S. Rajashekara
openaire   +1 more source

Parasitic extraction methodology for insulated gate bipolar transistors

APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058), 2000
This paper presents a methodology for extraction of the electrical package parasitics of insulated gate bipolar transistor power modules using simple electrical measurements. Nonidealities of device performance in zero-voltage and zero-current switching are exploited to obtain the parasitic collector and emitter inductance.
M. Trivedi, K. Shenai
openaire   +1 more source

Promising Algorithm Addressing Characteristic Curves of Insulated Gated Bipolar Transistor (IGBT) Fitted by Applying Bipolar Transistor Driven by Insulated Gate Bias

2021 7th International Conference on Applied System Innovation (ICASI), 2021
Power devices have been overwhelmingly popular for the last decades. Insulated Gate Bipolar Transistor (IGBT) is quite dominant for the capability of providing relatively high current at pretty high sustaining breakdown voltages. The underlying bipolar junction transistors (including NPN and PNP) get activated as the bias is applied to the isolated ...
Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin   +5 more
openaire   +1 more source

Recent advances in insulated gate bipolar transistor technology

IEEE Transactions on Industry Applications, 1990
Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area
H. Yilmaz, K. Owyang, M.F. Chang, J.L. Benjamin, W.R. Van Dell   +4 more
openaire   +1 more source

Latch-up prevention in insulated gate bipolar transistors

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002
A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages.
A. Nezar, P.K.T. Mok, C.A.T. Salama
openaire   +1 more source

Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors

Japanese Journal of Applied Physics, 1983
A lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) is proposed which has a lateral p +-n-n + (or n +-p-p +) diode structure on the top of the insulator and in which the insulated gate is aligned in the n (or p) region and the thickness of the n (or p ...
openaire   +1 more source