Results 141 to 150 of about 779 (192)

Analysis of double trench insulated gate bipolar transistor

Solid-State Electronics, 1995
Abstract Numerical simulation is used to analyse a novel Double Trench Insulated Gate Bipolar Transistor (DT-IGBT) structure. It has been found that the DT-IGBT structure can be used to achieve a switching loss similar to that of the power MOSFET transistors.
Q. Huang, G.A.J. Amaratunga
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A dynamic n-buffer insulated gate bipolar transistor

Solid-State Electronics, 2001
Abstract A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with double gates is proposed and analysed in detail by using two-dimensional numerical simulations. It is found that the turn-off energy loss of this device is reduced and the short-circuit performance is improved significantly compared to the optimised conventional IGBT ...
S Huang, K Sheng, F Udrea, G.A.J Amaratunga   +3 more
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Series Connection of Insulated Gate Bipolar Transistors (IGBTs)

IEEE Transactions on Power Electronics, 2012
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
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Real Time Simulation of Insulated Gate Bipolar Transistor

Applied Mechanics and Materials, 2013
The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example.
Xiao Jun Ma, Zong Min Yang, Chun Guang Liu, Yu Lin Yan   +3 more
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Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Materials Science Forum, 2006
The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness
S. Balachandran, T. Paul Chow, Anant K. Agarwal   +2 more
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A novel high performance insulated gate bipolar transistor

Solid-State Electronics, 2006
Abstract For the first time, a new concept of LDE-IGBT (local drift-region enhanced IGBT) is proposed and verified by two-dimensional (2D) device-circuit mixed simulations. The structure of the proposed device is almost identical to that of the conventional IGBT, except for an additional n + plugged region under the gate contact. The proposed device
Fei Zhang, Lina Shi, Chengfang Li
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Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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Silicon IGBT (Insulated Gate Bipolar Transistor)

2011
The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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The Trench Planar Insulated Gate Bipolar Transistor (TPIGBT)

IEE Colloquium Recent Advances in Power Devices, 1999
A new type of IGBT structure, with a trench gate placed in the middle of the JFET region, has been proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance and resistive turn-off, and compared to a reference 2 kV planar, fine-lithography IGBT.
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An efficient gate driver for high-power insulated gate bipolar transistors

Proceedings of 1994 IEEE Industry Applications Society Annual Meeting, 2002
This paper presents a novel FET/IGBT gate drive circuit for high power applications. Full galvanic isolation is provided, no floating power supplies are needed and continuous (DC) gate drive is possible. The circuit topology consists in essence of an inverter coupled to a synchronous rectifier.
M.J. Case, J.J. Schoeman, G. Blajszczak, J.D. van Wyk   +3 more
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